Advanced process control method for gate profile and system for fabricating integrated circuit
A technology of process control and process, applied in the direction of electrical components, circuits, electric solid devices, etc., can solve the problems of inappropriate and inconvenient manufacturing methods, and achieve the effect of improving component performance
Active Publication Date: 2011-11-23
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
[0003] This shows that above-mentioned existing system manufactures the method for IC element, obviously still has inconvenience and defect in manufacturing method and use, and urgently needs to be further improved
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general manufacturing method has no suitable method to solve the above-mentioned problems. This is obviously a problem. Issues that relevant industry players are eager to solve
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[0057] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the following, in conjunction with the accompanying drawings and preferred embodiments, will discuss the advanced process control method of the gate outline proposed by the present invention and the process of manufacturing integrated circuit components. The specific implementation, manufacturing method, steps, structure, features and functions of the system are described in detail below.
[0058] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of the specific implementation mode, when the technical means and functions adopted by the present invention to achieve the predetermined purpose can be obtained a deeper and more specific understanding, but t...
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The present invention relates to an advanced process control method for gate profile and a system for fabricating integrated circuit. The method is used for fabricating a semiconductor device with improved performance. The method comprises providing a substrate; performing a plurality of processes to form a gate stack over the substrate, wherein the gate stack comprises a gate layer; measuring a grain size of the gate layer after at least one of the plurality of processes; determining whether the measured grain size is within a target range; and modifying a recipe of at least one of the plurality of processes if the measured grain size of the gate layer is not within the target range.
Description
technical field [0001] The present invention relates to a method for manufacturing integrated circuit components, in particular to a process (ie, manufacturing process, referred to as a process) control method system for manufacturing integrated circuit components. Background technique [0002] The semiconductor integrated circuit (integrated circuit; IC) industry has experienced rapid growth. During the evolution of ICs, the geometric size (ie, the smallest part or circuit that can be produced by a process) has gradually decreased, while the functional density (ie, the number of interconnected elements per wafer area) has gradually increased. Generally speaking, the process of scaling down can bring benefits such as increasing production efficiency and reducing related costs. It has been observed that during the scaling down process described above, maintaining the process variations within an acceptable range faces the following challenges. For example, as process geomet...
Claims
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IPC IPC(8): H01L21/00H01L21/28H01L21/66
CPCH01L22/20H01L22/12H01L21/28026H01L2924/0002H01L2924/00
Inventor 吴志仁黄振铭杜安群
Owner TAIWAN SEMICON MFG CO LTD