Manufacturing method of silicon nitride film window for imaging of X-ray microlens

Abstract

The invention discloses a manufacturing method for a silicon nitride film window for imaging of an X-ray microlens, which comprises the following steps: respectively depositing low-stress silicon nitride films on both surfaces of a silicon chip substrate; using a mask plate to transfer a silicon nitride window diagram onto a photoresist which corresponds to the silicon nitride window diagram and is covered on one silicon nitride film; forming a photoetching opening area which is exposed and developed and a non-photoetching area which is not exposed and developed of the photoresist; etching the silicon nitride film by the photoetching opening area and exposing the silicon chip substrate; etching a silicon nitride window diagram groove; forming a silicon residual layer between the bottom ofthe silicon nitride window diagram groove and the other silicon nitride film; and finally utilizing a wet etching method to remove the silicon residual layer. The manufacturing method of the invention reduces damage to the silicon nitride film window and makes the silicon nitride film window more regular, can randomly regulate the thickness of the silicon substrate, shortens the manufacturing period of the finished product and improves the yield and the production benefit.

Description

technical field [0001] The invention relates to a method for manufacturing a silicon nitride window for precision ray microscopy, in particular to a method for manufacturing a silicon nitride film window for X-ray microlens imaging. Background technique [0002] The current preparation method of a silicon nitride window for X-ray microlens imaging includes the following technical steps: plating on a silicon wafer by plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical vapor deposition (LPCVD) A layer of silicon nitride film with a certain thickness, apply a layer of photoresist on the silicon nitride film for photolithography, development, and perform reactive ion etching (RIE), and finally perform wet etching or dry etching to obtain Silicon nitride window. [0003] SF6 is commonly used in the etching of silicon and silicon dioxide, and the anisotropy of polyfluorine groups is poor (especially SF6), because SF6 provides polyfluorine, which can etch si...

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Problems solved by technology

[0003] SF6 is commonly used in the etching of silicon and silicon dioxide, and the anisotropy of the polyfluorine family is poor (especially SF6), because SF6 provides polyfluorine, which can etch silicon relatively strongly, but fluorine silicon compounds If the boiling point is too low, it will be difficult for the polymer to aggregate, which will easily cause over-etching

[0004] The main disadvantages of the current silicon nitride window preparation method are: due to the anisotropy in the silicon etching rate, the shape of the obtained finished product is prone to large deviations from the expected shape; and the etching time required for thick silicon wafers is too long. The damage to the silicon nitride window is large, and it is easy to generate pollutants; the thickness of the silicon substrate is difficult to adjust as required

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