Radiating packaging structure of semiconductor chip

A semiconductor and chip technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as limiting the application range of heat dissipation design

Inactive Publication Date: 2010-11-17
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above heat dissipation package structure still has the following problems during actual assembly: such as Figure 1C As shown, when the solder balls 18 are planted by reflow soldering, it is usually necessa

Method used

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  • Radiating packaging structure of semiconductor chip
  • Radiating packaging structure of semiconductor chip
  • Radiating packaging structure of semiconductor chip

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Example Embodiment

[0027] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings:

[0028] Please refer to Figure 2A , 2B And 2C, which disclose the assembly diagram of the heat dissipation package structure of the semiconductor chip according to the first embodiment of the present invention, wherein the heat dissipation package structure includes a substrate 21, at least one chip 22, a first adhesive layer 23, a frame body 24, A second adhesive layer 25, a heat sink 26, a thermally conductive interface material layer 27 and several output terminals 28. The present invention is suitable for common package structures with a substrate, such as ball grid array package structure (BGA), pin grid array package structure (PGA), contact grid array package structure (LGA) or chip on substrate package stru...

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Abstract

The invention discloses a radiating packaging structure of a semiconductor, which comprises a base plate, a frame, a radiating fin and a heat conducting interface material layer, wherein the base plate loads and is electrically connected with at least one chip; the frame is bonded to the periphery of the base plate; the radiating fin is provided with one bonding surface bonded to the frame, the bonding surface is additional provided with one heat conducting area, and the heat conducting area is provided with a barrier wall to surround and form a material limiting space; and the heat conducting interface material layer is arranged in the material limiting space. The chip is provided with a radiating surface stretching into the material limiting space. The heat conducting interface material layer is located between the heat conducting area of the radiating fin and the radiating surface of the chip. The material limiting space is used for preventing the overflow, voids or other defects of the heat conducting interface material layer during high-temperature manufacturing.

Description

【Technical field】 [0001] The invention relates to a heat dissipation package structure of a semiconductor chip, in particular to a heat dissipation package structure of a semiconductor chip which can prevent overflow or gaps in a thermally conductive interface material layer. 【Background technique】 [0002] Nowadays, in order to meet various high-density packaging requirements, the semiconductor packaging industry has gradually developed various types of packaging structures, among which the common packaging structures with substrates include ball grid array packaging structures (ball grid array, BGA) , a pin grid array package structure (pin grid array, PGA), a land grid array package structure (land grid array, LGA) or a board on chip package structure (board on chip, BOC), etc. In the above packaging structure, at least one chip is carried on the upper surface of the substrate, and several pads of the chip are electrically connected to the upper surface of the substrate t...

Claims

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Application Information

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IPC IPC(8): H01L23/367H01L23/10
CPCH01L2224/73253H01L2924/0002H01L2924/15311H01L2224/73204H01L2224/16225H01L2224/83101H01L2224/27013H01L2224/32225
Inventor 黄东鸿
Owner ADVANCED SEMICON ENG INC
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