Acceleration sensor element and acceleration sensor having same
An acceleration sensor and acceleration technology, applied in the direction of measuring acceleration, multi-dimensional acceleration measurement, speed/acceleration/impact measurement, etc., can solve the problems of support substrate or cover contact, greater influence, easy bending and deformation, etc., to reduce the gap, Effect of reducing stress and improving impact strength
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Embodiment 1
[0064] figure 1 It is a plan view showing the structure of the acceleration sensor element 10 in the acceleration sensor element 30 with a cover of the first embodiment. figure 2 and image 3 Is a cross-sectional view of the acceleration sensor element 30 with a cover of the first embodiment, figure 2 Yes figure 1 K-k section view of image 3 Yes figure 1 M-m section view.
[0065] The acceleration sensor element 10 with a cover of Embodiment 1, for example, can be applied to the prior art example Figure 16 The acceleration sensor shown is assembled into a resin protective package. Therefore, in the first embodiment, a detailed description will be given focusing on the acceleration sensor element 30 with a cover.
[0066]
[0067] In the acceleration sensor element 10 of the first embodiment, the weight portion 12 is supported in the support frame portion 11 from four directions by the four flexible beam portions 13. The support frame portion 11 is separated by a separation g...
Embodiment 2
[0089] Figure 5 It is a schematic plan view showing the structure of the acceleration sensor element 10 of the second embodiment. In the center of the beam portion 13, a shape in which a ring portion 51 is provided as a compressive stress absorbing portion is formed. The silicon oxide film or the like formed on the surface of the acceleration sensor element 10 has a smaller thermal expansion coefficient than silicon. In addition, during film formation, annealing is performed at a high temperature of, for example, about 950°C. Therefore, heat is generated when cooled to room temperature. stress. The weight portion 12 and the inner frame 15 are formed from the first layer 24 to the second layer 25. Since the thickness of the second layer 25 is thick, it basically shrinks by the thermal expansion coefficient of silicon. However, because the beam portion 13 only consists of the second layer It is composed of one layer 24, so the ratio of silicon oxide film is high, and thermal sh...
Embodiment 3
[0095] Image 6 It is a schematic plan view showing the structure of the acceleration sensor element 10 of the third embodiment. The inner frame support portion 17 is formed in a shape in which a ring portion 52 as a compressive stress absorbing portion is provided. As in the second embodiment, there is an effect of preventing the inner frame support portion 17 from buckling. When the inner frame support portion 17 is buckled, the inner frame 15 is displaced and approaches the upper cover 19 or the lower cover 22, so it is difficult to narrow the gap 31. By forming the ring portion 52 on the inner frame support portion 17, buckling can be prevented. In addition, it has the effect of absorbing the influence of the deformation of the outer frame 16, making it more difficult to change the output.
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