Semiconductor device and semiconductor device manufacturing method
A manufacturing method and semiconductor technology, which are applied in the manufacturing of semiconductor/solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as large difference in linear expansion coefficient, and achieve the effect of improving heat dissipation and preventing bending
Active Publication Date: 2016-05-25
FUJI ELECTRIC CO LTD
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Problems solved by technology
[0003] In order to assemble the IGBT device, when the insulating circuit substrate 4 (DCB substrate: Direct Copper Bonding substrate-direct copper clad substrate) and the metal plate 3 are joined by solder 5, since the difference in linear expansion coefficient between the insulating circuit substrate 4 and the metal plate 3 is large, compared to Figure 7 (a) Flat shape before welding, such as Figure 7 As shown in (b), after the soldering process, it is inevitable that the center of the back side of the metal plate 3 on the opposite side of the soldered insulating circuit substrate 4 becomes the bottom and bends into a concave shape.
Method used
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Embodiment 1
[0081] Made on a metal plate 20 made of copper as Figure 5 as shown (when viewed from above as Figure 8(b)) arrange six test samples of the insulating circuit substrate 21, then cover the parts other than the first region 13 corresponding to the insulating circuit substrate 21 with a resist mask, and after selectively performing shot peening treatment, use The 3D laser displacement meter measures the bending value. figure 2 The amount of curvature in the longitudinal direction shown in (a) (difference in elevation between the center and edge of the curved surface) is a positive curvature of 500 μm as a whole, and local curvature due to the influence of the insulating circuit board 21 is almost eliminated. also, figure 2 The amount of curvature in the short-side direction shown in (b) is a positive curvature of 200 μm as a whole, and there is no local curvature due to the influence of the insulating circuit board 21 . also, image 3 yes figure 2 Enlarged view of (a). ...
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The purpose of the present invention is to provide a semiconductor device in which not only the overall warpage of a metal plate bonded to a radiator but also a local warpage caused by bonding a plurality of insulating circuit boards are reduced and also provide a method for manufacturing the semiconductor device. In a semiconductor device in which a plurality of insulating circuit boards (21) are solder-bonded apart from each other on one surface of a metal plate (20), a first region (13) corresponding to the arrangement of the metal portion (26) of each of the insulating circuit boards (21) is provided on the surface opposite to the surface of the metal plate (20) on which the insulating circuit boards (21) are disposed, and a surface work hardened layer (11) is provided in at least a part of the first region (13). A local warpage caused by the difference between the thermal expansions of the insulating circuit boards (21) and the metal plate (20) is reduced by the compressive stress of the surface work hardened layer (11).
Description
technical field [0001] The present invention relates to a semiconductor device such as a semiconductor device mounted on a power conversion device or the like, and a method of manufacturing the semiconductor device. Background technique [0002] A cross-sectional view of a conventional semiconductor device such as Figure 6 shown. As the semiconductor chip 6 mounted on this semiconductor device, there are IGBT (Insulated Gate Bipolar Transistor), MOSFET, (MOS Field Effect Transistor), FWD (Freewheel Diode), and the like. Hereinafter, a semiconductor device on which an IGBT is mounted is referred to as an IGBT device. Hereinafter, a semiconductor device will be described by taking an IGBT device as an example. [0003] In order to assemble the IGBT device, when the insulating circuit substrate 4 (DCB substrate: Direct Copper Bonding substrate-direct copper clad substrate) and the metal plate 3 are joined by solder 5, since the difference in linear expansion coefficient betw...
Claims
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IPC IPC(8): H01L23/36H01L23/12
CPCH01L2224/32225H01L2224/48227H01L2224/4846H01L2224/73265H01L2924/19107H01L2924/3511H01L23/3735H01L23/4006H01L21/4882H01L24/29H01L24/32H01L24/48H01L24/73H01L25/072H01L2224/291H01L2924/1203H01L2924/13055H01L2924/13091H01L2924/00014H01L23/367H01L2924/00012H01L2924/014H01L2224/45099H01L2224/45015H01L2924/207H01L21/4875H01L23/49838H01L23/49861H01L23/49894
Inventor 斋藤隆加藤辽一西村芳孝百濑文彦
Owner FUJI ELECTRIC CO LTD