Semiconductor device and method for manufacturing semiconductor device
A manufacturing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., can solve problems such as large differences in linear expansion coefficients, and achieve the effect of improving heat dissipation and preventing bending
Active Publication Date: 2018-12-28
FUJI ELECTRIC CO LTD
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] In order to assemble the IGBT device, when the insulating circuit substrate 4 (DCB substrate: Direct Copper Bonding substrate-direct copper clad substrate) and the metal plate 3 are joined by solder 5, the difference in linear expansion coefficient between the insulating circuit substrate 4 and the metal plate 3 is large. , compared to Figure 7 (a) Flat shape before welding, such as Figure 7 As shown in (b), after the soldering process, it is inevitable that the center of the back side of the metal plate 3 on the opposite side of the soldered insulating circuit substrate 4 becomes the bottom and bends into a concave shape.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0079] Made on a metal plate 20 made of copper as Figure 5 as shown (when viewed from above as Figure 8(b)) arrange six test samples of the insulating circuit substrate 21, then cover the parts other than the first region 13 corresponding to the insulating circuit substrate 21 with a resist mask, and after selectively performing shot peening treatment, use The 3D laser displacement meter measures the bending value. figure 2 The amount of curvature in the longitudinal direction shown in (a) (difference in elevation between the center and edge of the curved surface) is a positive curvature of 500 μm as a whole, and local curvature due to the influence of the insulating circuit board 21 is almost eliminated. also, figure 2 The amount of curvature in the short-side direction shown in (b) is a positive curvature of 200 μm as a whole, and there is no local curvature due to the influence of the insulating circuit board 21 . also, image 3 yes figure 2 Enlarged view of (a). ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
It is an object of the present invention to provide a semiconductor device and a method of manufacturing the semiconductor device that can reduce not only the overall warpage of metal plates joined to a cooler but also local warpage caused by joining a plurality of insulating circuit boards. In a semiconductor device in which a plurality of insulated circuit substrates (21) are spaced apart from each other on one surface of a metal plate (20) and soldered together, on the opposite side of the metal plate (20) to the surface on which the insulated circuit substrates (21) are arranged On the surface, a first region (13) corresponding to the arrangement of metal parts (26) of the insulating circuit board (21) is provided, and a surface work-hardened layer (11) is provided on at least a part of the first region (13). Local warpage caused by the difference in thermal expansion between the insulating circuit substrate (21) and the metal plate (20) is reduced by utilizing the compressive stress of the surface work-hardened layer (11).
Description
technical field [0001] The present invention relates to a semiconductor device such as a semiconductor device mounted on a power conversion device or the like, and a method of manufacturing the semiconductor device. Background technique [0002] A cross-sectional view of a conventional semiconductor device such as Figure 6 shown. As the semiconductor chip 6 mounted on this semiconductor device, there are IGBT (Insulated Gate Bipolar Transistor), MOSFET (MOS Field Effect Transistor), FWD (Freewheel Diode), and the like. Hereinafter, a semiconductor device on which an IGBT is mounted is referred to as an IGBT device. Hereinafter, a semiconductor device will be described by taking an IGBT device as an example. [0003] In order to assemble the IGBT device, when the insulating circuit substrate 4 (DCB substrate: Direct Copper Bonding substrate-direct copper clad substrate) and the metal plate 3 are joined by solder 5, the difference in linear expansion coefficient between the...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/36H01L23/12
CPCH01L2224/32225H01L2224/48227H01L2224/4846H01L2224/73265H01L2924/19107H01L2924/3511H01L23/3735H01L23/4006H01L21/4882H01L24/29H01L24/32H01L24/48H01L24/73H01L25/072H01L2224/291H01L2924/1203H01L2924/13055H01L2924/13091H01L2924/00014H01L23/367H01L2924/00012H01L2924/014H01L2224/45099H01L2224/45015H01L2924/207H01L21/4875H01L23/49838H01L23/49861H01L23/49894
Inventor 斋藤隆加藤辽一西村芳孝百濑文彦
Owner FUJI ELECTRIC CO LTD