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Method for detecting integrity of gate oxide

A gate oxide, integrity technology, applied in the direction of material breakdown voltage, can solve the problems of waste, too many samples, inaccurate test results, etc., and achieve the effect of accurate test results

Inactive Publication Date: 2010-12-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] The invention solves the problem that the test result is not accurate enough when the existing technology detects the integrity of the gate oxide layer, and the problem that the number of samples used is too large and wasteful

Method used

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  • Method for detecting integrity of gate oxide
  • Method for detecting integrity of gate oxide
  • Method for detecting integrity of gate oxide

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Embodiment approach

[0035] Based on this, the present invention provides a method for detecting the integrity of the gate oxide layer, referring to figure 2 As shown, according to one embodiment thereof, including:

[0036] Step s1, according to the target significance level, the target number of failed chips and the target defect density, obtain the minimum number of samples;

[0037] Step s2, performing a slope voltage test with the number of tested chip samples greater than or equal to the minimum number of samples;

[0038] Step s3, evaluating whether the chip under test passes the ramp voltage test.

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Abstract

The invention relates to a method for detecting the integrity of a gate oxide, which comprises the following steps of: acquiring the minimum sample number according to the significance level, the failure number and the defect density of an object; performing a ramp voltage test on tested chips with the sample number of greater than or equal to the minimum sample number; and estimating whether the tested chips pass the ramp voltage test or not. The method for detecting the integrity of the gate oxide can acquire more economical and accurate test results.

Description

technical field [0001] The invention relates to the field of reliability testing, in particular to a method for detecting the integrity of gate oxide layers. Background technique [0002] As a means to evaluate the performance of semiconductor devices, reliability testing plays an important role in the manufacturing process of semiconductor devices. Generally speaking, semiconductor devices that have passed reliability tests will be put into mass production. [0003] Integrity testing of the gate oxide layer is a reliability testing item commonly used in the industry. Generally, a ramp voltage (V-ramp) test is used to detect the integrity of the gate oxide layer of the semiconductor device. The ramp voltage test can reflect the breakdown characteristics of the tested semiconductor device under the stress of the ramp voltage, and thus serve as a reference for detecting the integrity of the gate oxide layer of the semiconductor device. When evaluating the results of the ram...

Claims

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Application Information

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IPC IPC(8): G01N27/92
Inventor 杨斯元简维廷
Owner SEMICON MFG INT (SHANGHAI) CORP
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