Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Block access-based flash reading and writing method

A technology of flash memory and block number, which is applied in the direction of memory address/allocation/relocation, input/output to record carrier, etc., which can solve the problem of capacity reduction and achieve the effect of expanding the use capacity

Active Publication Date: 2012-05-02
苏州国芯科技股份有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When there are many bad blocks in Flash, the capacity will drop significantly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Block access-based flash reading and writing method
  • Block access-based flash reading and writing method
  • Block access-based flash reading and writing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0025] Embodiment: a kind of method for reading and writing flash memory based on block access, comprising the following steps:

[0026] Step 1, scanning each physical block of Flash flash memory, obtains the corresponding page status table of each physical block, and this page status table represents the distribution and the number of valid pages in each physical block in the physical block;

[0027] Step 2, the Flash flash memory is divided into at least one partition, and the physical blocks equal to the effective page number are divided into the same partition to obtain the partition physical block number table;

[0028] Step 3, obtaining the partition capacity table of each partition according to the number of physical blocks of the partition and the corresponding number of valid pages, the partition capacity table indicating the capacity of each partition;

[0029] Step 4. Determine the partition number where the sector number accessed by the application layer is located...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a block access-based flash reading and writing method. The method comprises the following steps of: 1, scanning physical blocks of the flash to acquire corresponding page status tables of the physical blocks; 2, acquiring a partition physical block numbering table; 3, acquiring a partition capacity table of partitions according to the number of partition physical blocks and the number of corresponding effective pages; 4, determining the serial number of the partition accessed by an application layer and the offset in the partition according to the partition capacity table; 5, acquiring the virtual block number and virtual page number of the partition through the offset according to the number of effective pages of the physical blocks in the partition; and 6, acquiring the serial numbers of the physical blocks according to the virtual block number along with the partition physical block numbering table, and acquiring the physical page numbers of the effective pages according to the virtual page number along with the page status table of the physical block. By mapping the physical layers with ineffective pages into a continuous linear storage medium, the effective capacity of the storage medium is maximally extended.

Description

technical field [0001] The invention relates to a method for reading and writing flash memory based on block access. Background technique [0002] Flash memory, as a storage medium, is widely used in the storage field due to its high cost performance. Due to the problem of the production process, the Flash supplier cannot guarantee that the chips shipped from the factory are free of defects, which requires the user to identify the defective storage area by himself during the application process and take corresponding measures. Since the large-capacity Flash is the smallest erasable unit with a block (the entire Flash is composed of several blocks, each block is composed of several pages, and each page is composed of several bytes), so generally, the defective memory Regions are also processed in blocks. [0003] However, this approach to management has flaws. As long as one page in a block is bad, the block is treated as a bad block. When there are many bad blocks in Fla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F12/02
Inventor 郑茳肖佐楠匡启和王廷平张文江
Owner 苏州国芯科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products