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Method for testing memory device

A technology of storage device and storage area, which is applied in static memory, instrument, memory address/allocation/relocation, etc. It can solve the problems of system hang-up and prone to bit inversion, etc., and achieve strong data correlation and reasonable test results reliable effect

Active Publication Date: 2012-12-19
WUHAN TIANYU INFORMATION IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (2) Prone to bit inversion
NAND FLASH is more prone to bit inversion. If the bit inversion occurs on key files, it will cause the system to hang up

Method used

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  • Method for testing memory device
  • Method for testing memory device

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Embodiment Construction

[0034] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0035] Storage device in the present embodiment is NAND flash, and the method for testing NANDflash storage device of the present invention comprises the steps:

[0036] 1. Divide the storage area of ​​the storage device

[0037] In this embodiment, 512 bytes are used as a sector, and the storage device is divided into multiple sectors, and each sector is divided into multiple areas, for example, divided into 32 16-byte areas. see attached figure 1 . The divided sector size and area size can be set and adjusted according to actual needs.

[0038] 2. Fill data in multiple areas divided above

[0039] (1) Write the first label data in the front area of ​​each sector, such as writing data in the first 32 bytes of each sector as follows:

[0040] 1) Take the initial logical address where the sector is located, and store it from the f...

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Abstract

The invention discloses a method for testing a memory device, which comprises the following specific steps: (1) dividing a memory region of the memory device, dividing the memory device into a plurality of sectors and further dividing each sector into a plurality of regions; (2) carrying out data filling in the plurality of the divided regions of each sector; and (3) reading data which is filled to each sector of the memory device, judging whether the memory device is normal or not, that is judging whether the read first identification data and the data stored in the follow-up regions are consistent with the corresponding written data or not, if not, determining that the memory device has a problem.

Description

technical field [0001] The invention relates to a method for testing a storage device, which includes testing whether the physical address of the storage device corresponds to the logical address one by one, and whether the data stored in the storage device is reliable. Background technique [0002] From MP3 to mobile phones and handheld computers, more and more portable devices carried by people need large-capacity data storage, and in these devices, NAND Flash has become a hardware solution widely recognized and adopted by the industry. There is no doubt that NAND Flash is the preferred non-volatile memory for portable devices. High density, low price, fast write speed, and long rewrite life make NAND Flash especially suitable for media applications, where fast and repeated operations on large-capacity files are required. [0003] With the wide application of NAND flash storage devices in electronic products, NAND flash storage devices play an important role in people's p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/08G06F12/06
Inventor 李晓俊
Owner WUHAN TIANYU INFORMATION IND