A high-resolution line array image reading device
A technology of line array image and reading device, which is applied in the direction of image communication, electrical components, etc., can solve the problems of optical signal restoration, distortion, loss of image information, etc., and achieve the effect of improving the reading quality.
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Embodiment 1
[0031] Example 1: image 3 It is a cross-sectional structure diagram of Embodiment 1 of the present invention. In the figure, 1 is a line lighting source that can emit light and evenly illuminate the original, and 2 is a line that extends to the entire reading range in the vertical direction of the moving direction of the original and can reflect the reflected light of the original. Focusing lens array, 3 is a plurality of sensor chips arranged in a line for receiving the light collected by the lens array 2, 4 is a sensor substrate on which the above-mentioned sensor chips are mounted, and 6 is a housing for accommodating the light source 1, the lens array 2, and the sensor substrate 4. Frame, 5 is the glass plate on which the original is placed on the frame 6, 7 is the socket for supplying power, drive signal and outputting the image signal to be read for the line array image reading device, 8 is for the sensor chip gap. The translucent plate for light refraction, 10 is the o...
Embodiment 2
[0050] Embodiment 2, in the foregoing embodiments, the refraction area on the light-transmitting plate is a triangular structure, and a curved surface structure can also be used, such as Figure 11 Shown is a schematic structural diagram of another light refraction area of the light-transmitting plate of the line scan image reading device according to Embodiment 2 of the present invention. The refraction area adopts a curved surface structure, and other refraction area structures can also be used, which have the same effect on light refraction.
Embodiment 3
[0051] Embodiment 3, in the foregoing embodiments, the non-uniform area N*P of the sensor chip adopts the length of 8 pixel periods, and in this embodiment, the period of 16 pixels is used as (20+2)*16=352 Micron, the sensor chip gap is still 80 microns, which is equivalent to 4 pixel distances, and 2 pixels are added to the chip on each side, that is, 18 pixels are arranged within the range of 352 microns, and the average value of the new arrangement period is 352 / 18 =19.6 microns, if the arrangement gap of the pixels is still 2, the average width of the pixels is 17.6 microns, which is 2.4 microns smaller than the original pixel width of 20. If the size of the new pixel varies uniformly above and below the average value, the range of variation is 4.8 microns, and since there are 18 pixels, the variation of each level of pixel width is 0.27 microns. Table 2 shows the arrangement period and pixel size of each pixel in the non-uniform area in this embodiment.
[0052] Table 2 ...
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