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Method for manufacturing patterned substrate on lithium aluminate wafer

A patterned substrate and lithium aluminate technology, which is applied in manufacturing tools, welding equipment, laser welding equipment, etc., can solve problems such as difficulty in obtaining high-quality lithium aluminate patterned substrates

Inactive Publication Date: 2012-08-29
SHANGHAI RES CENT OF ENG & TECH FOR SOLID STATE LIGHTING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem solved by the present invention is to provide a method for preparing a patterned substrate on a lithium aluminate wafer to solve the problem in the prior art that it is difficult to obtain a high-quality lithium aluminate patterned substrate by wet chemical etching

Method used

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  • Method for manufacturing patterned substrate on lithium aluminate wafer
  • Method for manufacturing patterned substrate on lithium aluminate wafer

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Experimental program
Comparison scheme
Effect test

Embodiment approach

[0034] An embodiment of a method for growing a GaN epitaxial film on a lithium aluminate pattern substrate provided by the present invention includes:

[0035] Provide lithium aluminate wafer;

[0036] Scanning the surface of the lithium aluminate wafer with a femtosecond laser to form a plurality of roughly parallel grooves to obtain a pattern substrate of the lithium aluminate wafer, the crystal plane of the lithium aluminate wafer is a (100) crystal plane;

[0037] A (10-10) plane GaN epitaxial film is grown on the pattern substrate.

[0038] Another embodiment of the method for growing a GaN epitaxial film on a lithium aluminate pattern substrate provided by the present invention includes:

[0039] Provide lithium aluminate wafer;

[0040] Scanning the surface of the lithium aluminate wafer with a femtosecond laser to form a plurality of roughly parallel grooves to obtain a pattern substrate of the lithium aluminate wafer, the crystal plane of the lithium aluminate wafer...

Embodiment 1

[0045] A lithium aluminate wafer with a (302) crystal plane is prepared, the root mean square roughness of the surface of the lithium aluminate wafer is 3 angstroms, and the lithium aluminate wafer is fixed on a sample stage.

[0046] The sample stage moves along the [203] direction at a speed of 5 μm / s, and the femtosecond laser 2 The power acts on the crystal plane of the lithium aluminate wafer to form a first trench with a depth of 30 nm and a width of 30 nm.

[0047] Then the sample stage is moved perpendicular to the [203] direction with a moving distance of 30 nm. Then move the sample stage along the [203] direction at a speed of 5 μm / s, and use a femtosecond laser at 3 J / cm 2 The power acts on the crystal plane of the lithium aluminate wafer to form a second trench with a depth of 30 nm and a width of 30 nm.

[0048] The above etching process was repeated to form a plurality of parallel grooves with a pitch of 30 nm to obtain a lithium aluminate wafer pattern substra...

Embodiment 2

[0051] A lithium aluminate wafer with a (100) crystal plane is prepared, the root mean square roughness of the surface of the lithium aluminate wafer is 5 angstroms, and the lithium aluminate wafer is fixed on a sample stage.

[0052]The sample stage moves along the [001] direction at a speed of 100 μm / s, and a femtosecond laser is used at 8 J / cm 2 The power acts on the crystal surface of the lithium aluminate wafer to form a first groove with a depth of 20 μm and a width of 20 μm.

[0053] Then the sample stage was moved perpendicular to the [001] direction with a moving distance of 20 μm. Then move the sample stage along the [001] direction at a speed of 100 μm / s, and use a femtosecond laser at 8 J / cm 2 The power acts on the crystal plane of the lithium aluminate wafer to form a second trench with a depth of 20 μm and a width of 20 μm.

[0054] The above etching process was repeated to form a plurality of parallel grooves with a pitch of 20 μm to obtain a lithium aluminate...

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Abstract

The invention relates to a method for manufacturing a patterned substrate on a lithium aluminate wafer, which comprises the following steps of: providing the lithium aluminate wafer; and scanning the surface of the lithium aluminate wafer for many times along parallel directions by using femtosecond laser to form a plurality of parallel trenches and obtain the lithium aluminate wafer patterned substrate. Compared with the prior art, the method has the advantages of etching the patterned substrate on the lithium aluminate wafer by adopting the femtosecond laser, and adjusting the depth-to-width ratio of the trench by changing the focusing power of the femtosecond laser; and compared with wet or dry etching, the method has the advantages of simple operation and capability of easily obtaining the patterned substrate with large depth-to-width ratio.

Description

technical field [0001] The invention relates to substrate wafer processing, in particular to a method for preparing a pattern substrate on a lithium aluminate wafer. Background technique [0002] In recent years, lithium aluminate wafers have attracted great interest from researchers because of their relatively small lattice and thermal mismatches to GaN. [0003] More importantly, non-polar GaN films can be obtained on lithium aluminate substrates to prepare non-polar LEDs. The advantages are: first, the P-type doping concentration and hole activation concentration are obtained in non-polar GaN 2) Non-polar GaN-based LEDs can theoretically obtain higher internal quantum efficiency; third, non-polar GaN-based LEDs can achieve polarized light output. In addition, the non-polar GaN-based multilayer film structure can be used as a good ultraviolet light modulator. These advantages make lithium aluminate crystals have very good market prospects in GaN-based optoelectronic devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/428H01L21/20B23K26/36B23K26/364B23K26/402
Inventor 马可军杨卫桥李抒智王康平周颖圆杨洁翔王峰
Owner SHANGHAI RES CENT OF ENG & TECH FOR SOLID STATE LIGHTING