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Method for preparing SnO2 nanomaterial by hydride deposition

A technology for the generation of hydrides and hydrides, applied in the direction of nanotechnology, tin oxide, etc., can solve the problems of complex routes, high raw material costs, and expensive equipment, and achieve the effects of mild reaction conditions, less raw material consumption, and short reaction time

Inactive Publication Date: 2012-08-29
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the existing preparation processes have defects such as complex routes, high cost of raw materials, and expensive equipment. The above methods either need a long time and processing steps, or require expensive professional equipment and harsh synthesis conditions.

Method used

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  • Method for preparing SnO2 nanomaterial by hydride deposition
  • Method for preparing SnO2 nanomaterial by hydride deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1. After fully grinding 100 mg of activated carbon, add 0.5 ml of absolute ethanol and a few drops of dimethyl sulfoxide, stir until it becomes a paste, and coat it on the surface of the tungsten wire. Then put the tungsten wire in a muffle furnace for calcination at 200°C for 2 hours to remove ethanol and dimethyl sulfoxide for later use.

[0016] 2. Put the tungsten wire in the quartz cover made by the laboratory as the receiving substrate of the tin dioxide material. The tungsten wire is powered by a DC power supply, and the temperature of the tungsten wire is controlled at about 370°C by adjusting the current of the tungsten wire.

[0017] 3. The tin protochloride solution and the potassium borohydride solution are mixed and reacted by a peristaltic pump to generate SnH 4 Brought out by argon, it is passed to the surface of the tungsten wire and deposited for 30 minutes.

[0018] 4. After the deposition is completed, place the tungsten wire in a muffle furnace and ...

Embodiment 2

[0020] This process method is substantially the same as the steps of the first embodiment, except that the temperature of the tungsten wire is controlled at 100-200° C. during the growth process. The specific method is to lower the current of the tungsten wire so that the SnH 4 After being deposited on the surface for 30 minutes, it was calcined to obtain an antennae-shaped nano-tin dioxide material with antennae length similar to that of Example 1 and a higher aspect ratio.

Embodiment 3

[0022] This process method is substantially the same as the steps in Example 1, except that the chemical vapor deposition time is controlled to 2 hours during the growth process. The specific method is to control the running time of the peristaltic pump, mix the stannous chloride solution and the potassium borohydride solution, and let the SnH 4 After being deposited on the surface of the tungsten wire coated with activated carbon for 120 minutes, it was calcined to obtain an antennae-shaped nano-tin dioxide material with a larger size and an aspect ratio similar to that of Example 1.

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Abstract

The invention relates to a method for preparing a stannic dioxide (SnO2) nanomaterial on the surface of a tungsten filament. The method is characterized in that: the tungsten filament coated with active carbon is used as a heating device and a substrate for material deposition; SnH4 produced by hydride generation is used as a precursor; and the SnO2 nanomaterial can be obtained by performing chemical vapor deposition under a normal pressure. The method has the advantages of no need of other large-sized equipment, simple device, short reaction time, small amount of used raw materials, mild reaction condition and low cost. The method for preparing the nanomaterial can be expected to be expanded to be used for the preparation of corresponding oxide nanomaterials of other elements capable of producing chemical vapor.

Description

technical field [0001] The invention belongs to the technical field of material preparation and relates to a new method for preparing tin dioxide material. Background technique [0002] Tin dioxide is a typical wide bandgap n-type semiconductor material with a bandwidth in the range of 3.6-4.0eV. Due to its unique photoelectric properties and gas-sensing properties, it is widely used in the fields of organic synthesis, ceramic industry, gas-sensing components, semiconductor materials, electrode materials, and solar cells. Tin dioxide materials often have a variety of shapes to meet different applications, mainly including tin dioxide powder, nano-tin dioxide film, nanobelt, nanowire and nanorod. At this stage, the research and preparation of tin dioxide materials suitable for different fields has become one of the hotspots of people's research. There are many methods for preparing tin dioxide materials, including solid-phase method, liquid-phase method, and gas-phase metho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/02B82Y40/00
Inventor 吕弋席毛洋刘睿
Owner SICHUAN UNIV