Dynamic random access memory (DRAM)

Abstract

The invention provides a dynamic random access memory (DRAM), which comprises a memory unit with an area of 7F2, parallel word lines arranged at equal intervals and parallel bit lines which are arranged at equal intervals and vertical to the word lines, wherein the pitch between the word lines is 2F; the pitch between the bit lines also comprises a plurality of active areas; the connecting lines between the center of each active area and the centers of two adjacent active areas which are on the same adjacent bit line forms an equilateral triangle, and the length of the edge of the equilateral triangle is 4F. When the technical scheme is implemented, the memory unit area can be better used by adopting the memory unit with an area of 7F2 as a folding bit line memory unit than adopting the memory unit with an area of 8F2 as the folding bit line memory unit; and compared with a DRAM having the memory unit with an area of 6F2, the DRAM having the memory unit with the area of 7F2 does not have technical difficulties, and drawbacks of low noise immunity and low signal to noise ratio, which are caused by an open bit line structure, of the DRAM having the memory unit with the area of 6F2.

Description

technical field [0001] The invention relates to a memory, in particular to a DRAM memory. Background technique [0002] Integrated circuits have evolved from integrating dozens of devices on a single chip to integrating millions of devices. The performance and complexity of traditional integrated circuits have far exceeded the original imagination. To achieve increases in complexity and circuit density (the number of devices that can fit on a given chip area), the feature size of a device, also called "geometry," has grown with each generation of integrated circuits Getting smaller and smaller. Increasing integrated circuit density not only increases the complexity and performance of integrated circuits, but also reduces costs for consumers. Making devices smaller is challenging because every process in integrated circuit manufacturing has a limit, that is, if a certain process is to be performed under the condition of being smaller than the feature size, the process or d...

AI Technical Summary

Problems solved by technology

[0008] The problem to be solved by the present invention is to provide a kind of DRAM memory, to solve the existing 2 memory cell DRAM memory consumes more memory cell area, and the existing 6F 2 The DRAM memory of the storage unit adopts the difficulty in the process of using a smaller storage unit, and uses an open folded bit line structure, which leads to the disadvantages of low noise immunity and reduced signal-to-noise ratio

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