Thin film transistor and pixel structure with same
A technology of thin film transistors and channel layers, applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve the problems of limiting thin film transistors, which are not conducive to the increase of output current, and achieve the effect of good reaction rate
Inactive Publication Date: 2011-06-01
AU OPTRONICS CORP
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Problems solved by technology
At this time, the limitation of channel length will not be conducive to the improvement of output current and limit the development of thin film transistors.
Method used
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Embodiment Construction
[0043] figure 1 It is a schematic cross-sectional view of a thin film transistor according to the first embodiment of the present invention. Please refer to figure 1 , the thin film transistor 100 is disposed on the substrate 10 . The thin film transistor 100 includes a gate 110 , a gate insulating layer 120 , a source 130 , a channel layer 140 , a protection layer 150 and a drain 160 . The gate 110 is disposed on the substrate 10 , and the gate insulating layer 120 covers the gate 110 and the substrate 10 . The source 130 is disposed on a portion of the gate insulating layer 120 . The channel layer 140 is disposed on the gate insulating layer 120 and covers part of the source 130 and part of the gate insulating layer 120 above the gate 110 . The protection layer 150 covers the source electrode 130 , the channel layer 140 and the gate insulating layer 120 not covered by the source electrode 130 and the channel layer 140 . The drain 160 is disposed above the channel layer ...
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The invention relates to a thin film transistor and a pixel structure with the same. The thin film transistor is arranged on a substrate and comprises a grid, a grid insulating layer, a source electrode, a channel layer and a drain electrode, wherein the grid insulating layer is covered on the grid and the substrate; the source electrode is arranged on partial grid insulating layer; the channel layer is arranged on the grid insulating layer and covers partial source electrode above the grid; and the drain electrode is arranged on the channel layer and is electrically connected to the channel layer. In the thin film transistor, the source electrode and the drain electrode are made of different layers of conductive layers, and the source electrode and the drain electrode are made on the front side and the rear side of the channel layer; and the horizontal distance between the source electrode and the drain electrode is not limited by process limits, so that the length of a channel can be adjusted according to different requirements and ideal carrier drift mobility is realized. Thus, the pixel structure with the thin film transistor has higher reaction rate.
Description
technical field [0001] The invention relates to a thin film transistor and a pixel structure, and in particular to a thin film transistor whose channel length can be adjusted according to different requirements and a pixel structure with the thin film transistor. Background technique [0002] In recent years, due to the advancement of semiconductor process technology, the manufacture of thin film transistors has become easier and faster. Thin film transistors are widely used, such as computer chips, mobile phone chips or thin film transistor liquid crystal displays (thin film transistor liquid crystal display, TFT LCD). Taking a thin film transistor liquid crystal display as an example, the thin film transistor can be used as a charge or discharge switch to control the display of each pixel. [0003] In the prior art, the source and the drain of the thin film transistor are formed by patterning the same conductive layer. The horizontal distance between the source and drain...
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IPC IPC(8): H01L29/786H01L29/417
CPCH01L29/41733
Inventor 吴贞仪高逸群黄俊尧
Owner AU OPTRONICS CORP