Film transistor, pixel structure including film transistor and circuit structure
A thin-film transistor and electrical connection technology, applied in the direction of transistors, circuits, electrical components, etc., can solve the problems of limiting thin-film transistors, which are not conducive to the increase of output current, and achieve the effect of good response rate
Active Publication Date: 2013-07-31
AU OPTRONICS CORP
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Problems solved by technology
At this time, the limitation of channel length will not be conducive to the improvement of output current and limit the development of thin film transistors.
Method used
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[0052] figure 1 Shown is a schematic cross-sectional view of a thin film transistor according to the first embodiment of the present invention. Please refer to figure 1 , The thin film transistor 100 is disposed on the substrate 10. The thin film transistor 100 includes a gate 110, a gate insulating layer 120, a source 130, a channel layer 140, a protection layer 150, and a drain 160. The gate 110 is disposed on the substrate 10, and the gate insulating layer 120 covers the gate 110 and the substrate 10. The source 130 is disposed on a part of the gate insulating layer 120. The channel layer 140 is disposed on the gate insulating layer 120 and covers a part of the source electrode 130 and a part of the gate insulating layer 120 above the gate 110. The protective layer 150 covers the source 130, the channel layer 140, and the gate insulating layer 120 that is not covered by the source 130 and the channel layer 140. The drain 160 is disposed above the channel layer 140. In ad...
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The invention discloses a film transistor, a pixel structure including the film transistor and a circuit structure. The film transistor includes a grid, a grid insulating layer, a source, a passage layer and a drain. The grid insulating layer covers on the grid and a substrate. The source is arranged on a part of grid insulating layer. The passage layer is arranged on the grid insulating layer and covers a part of source above the grid. The drain is arranged on the passage layer and electrically connected to the passage layer. The source and the drain of the film transistor are made from the conductive layers in different levels and the source and the drain are respectively manufactured in front and behind the passage layer. In the film transistor, a horizontal distance between the sourceand the drain is not limited by the technology boundary such that the passage length is adjusted along with different requirements and has an ideal carrier migration rate. Therefore, the pixel structure of the film transistor may have a better reaction rate.
Description
Technical field [0001] The invention relates to a thin film transistor and a pixel structure, and more particularly to a thin film transistor whose channel length can be adjusted according to different requirements and a pixel structure having the thin film transistor. Background technique [0002] In recent years, due to advances in semiconductor process technology, the manufacture of thin film transistors has become easier and faster. Thin film transistors are widely used, such as computer chips, mobile phone chips, or thin film transistor liquid crystal displays (TFT LCDs). Taking a thin film transistor liquid crystal display as an example, the thin film transistor can be used as a charge or discharge switch to control the display of each pixel. [0003] In the prior art, the source and drain of the thin film transistor are patterned with the same conductive layer. The horizontal distance between the source and drain must be at least 3 μm to ensure that the source and drain ar...
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IPC IPC(8): H01L29/417H01L29/786
Inventor 吴贞仪高逸群黄俊尧
Owner AU OPTRONICS CORP