Half-tone mask plate and manufacturing method thereof
The invention relates to a technology of a halftone mask and a manufacturing method, which are applied to the photoengraving process, optics, instruments and other directions of the pattern surface, which can solve the problems of inability to perform finer adjustment and manufacturing errors, and achieve the improvement of light transmittance, Improved uniformity and accuracy, improved transmittance
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Embodiment 1
[0050] This embodiment provides a halftone mask. Figure 12 It is a schematic diagram of the structure of the halftone mask plate of the present invention. The half-tone mask plate includes a substrate 1, the substrate includes a semi-transmissive area, and at least one side of the semi-transmissive area is provided with a non-transmissive area adjacent to the semi-transmissive area, wherein the semi-transmissive area includes a The anti-transmission area at the edge, in this embodiment, a non-transmission area adjacent to the semi-transmission area is provided on both sides of the semi-transmission area, and the semi-transmission area includes the anti-transmission area located at both edges of the semi-transmission area; The area is provided with a first mask layer 2, and a second mask layer 3 is arranged on the first mask layer, and the second mask layer extends from the non-transmission area to the enhanced transmission area, and its extension part is separated from the su...
Embodiment 2
[0054] This embodiment provides a method for manufacturing a halftone mask. Such as image 3 Flowchart for making a halftone mask for this invention. A method for making a halftone mask comprises:
[0055] S10: forming a first mask layer on the surface of the substrate.
[0056] S20: forming a second mask layer on the surface of the first mask layer, wherein the etch rate of the material of the first mask layer is greater than the etch rate of the material of the second mask layer under the same etching conditions.
[0057] S30: selectively removing the first mask layer and the second mask layer of the semi-transmissive area, thereby forming a non-transmissive area covered by the first mask layer and the second mask layer and a semi-transmissive area exposing the substrate, And according to the difference in etch rate between the material of the first mask layer and the material of the second mask layer, the second mask layer extends from the non-transmission area to the en...
Embodiment 3
[0078] This embodiment provides a half-tone mask used for manufacturing a thin film transistor of a liquid crystal display.
[0079] A half-tone mask for manufacturing liquid crystal display thin film transistors, including a substrate, the substrate includes a non-transmissive area corresponding to the source electrode and drain electrode of the liquid crystal display thin film transistor, and a half tone corresponding to the channel of the liquid crystal display thin film transistor. In the transmission area, a non-transmission area is provided on at least one side of the semi-transmission area, wherein the semi-transmission area includes an anti-transmission area located at the edge of the semi-transmission area; a first mask layer is provided in the non-transmission area, and the A mask layer is provided with a second mask layer, and the second mask layer extends from the non-transmission area to the anti-transmission area; the part of the second mask layer extending to the...
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