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Susceptor with support bosses

A pedestal and boss technology, applied in the direction of polycrystalline material growth, crystal growth, from chemically reactive gases, etc.

Inactive Publication Date: 2013-07-24
MEMC ELECTONIC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Applicant has determined that each of the above techniques will have limited success

Method used

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  • Susceptor with support bosses
  • Susceptor with support bosses
  • Susceptor with support bosses

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Embodiment Construction

[0016] Referring now to the accompanying drawings, in particular figure 1 , the base is generally indicated at 10 . as explained below and Figure 4 Schematically illustrated, susceptor 10 supports semiconductor wafer 12 in a suitable deposition chamber 14 (broadly, a chemical vapor deposition apparatus) during a chemical vapor deposition process. more specifically and refer to Figure 4 , the chamber 14 has a plurality (eg, three) of support rods 16 extending upwardly within the chamber and engaging with the susceptor 10 during the chemical vapor deposition process.

[0017] refer to figure 1 and 2 , the base 10 comprises a disc-shaped body (generally indicated as 20 ) having an imaginary central axis 22 . Additionally, body 20 includes an upper surface 24 and a lower surface 26 . A first recess, generally indicated at 30 , extends downwardly from upper surface 24 into body 20 . The first recess 30 includes a generally cylindrical wall 32 and a face 34 extending inward...

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Abstract

A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process includes a body having opposing upper and lower surfaces. Support bosses extend downward from the lower face of the body. Each support boss has a boss opening sized and shaped for receiving a support post of a chemical vapor deposition device to mount the susceptor on the support post.

Description

technical field [0001] The present invention generally relates to susceptors for supporting semiconductor wafers during chemical vapor deposition processes. Background technique [0002] A chemical vapor deposition process (eg, an epitaxial deposition process) may be performed on a semiconductor wafer to grow a thin layer of silicon on the front surface of the wafer. This process allows the fabrication of devices directly on high-quality epitaxial layers. Conventional epitaxial deposition processes are disclosed in US Patent Nos. 5,904,769 and 5,769,942, which are incorporated herein by reference. [0003] Prior to epitaxial deposition, a semiconductor wafer is loaded into a deposition chamber and lowered onto a susceptor. After the wafer is set down on the susceptor, the epitaxial deposition process begins by introducing a cleaning gas such as hydrogen or a mixture of hydrogen and hydrochloric acid to the front surface of the wafer (i.e., the surface facing away from the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/54
CPCH01L21/6875C30B29/06H01L21/68735C23C16/4583C30B25/12C23C16/54H01L21/0262
Inventor J·A·皮特尼M·哈曼诺L·G·赫尔维格
Owner MEMC ELECTONIC MATERIALS INC