Unlock instant, AI-driven research and patent intelligence for your innovation.

Power semiconductor module

A technology for power semiconductors and guiding channels, which is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as pressure contact spring corrosion, and achieve the effect of saving materials

Inactive Publication Date: 2011-07-20
SEMIKRON ELECTRONICS GMBH & CO KG
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, corrosion of the pressure contact springs is sometimes observed during long periods of inactivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power semiconductor module
  • Power semiconductor module
  • Power semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The figure shows a part of the middle part of a housing for manufacturing a power semiconductor module using pressure contact technology. The plastic for the middle part denoted by reference numeral 1 as a whole is preferably made of polyamide. The plastic can be filled with glass fibers. The content of glass fiber can be 25 to 35% by weight. For example, plastic of type "Ultramid A3WG6" can be used.

[0015] To assemble the power semiconductor module, the intermediate part 1 is mounted on the base part, in which the power semiconductor module is supported on a cooling body (not shown here), for example. A control circuit board (not shown here) is mounted on the middle part 1, so that the pressure contact spring 2 held in the middle part 1 is elastically deformed and a second contact (not shown here) provided on the back side of the control circuit board and A pressure contact is established between the first contacts (not shown here) provided on the upper side of the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a power semiconductor module, wherein a housing is internally provided at least one guiding channel (3) which is provided with a pressure contact spring (2) that guides in the guiding channel. The pressure contact spring (2) is electrically connected with a first contact which is provided on a first assembly and a second contact or connecting component that is provided on a second assembly through a pressure contact technique. For preventing the pressure contact spring (2) from corrosion, the invention suggests that the guiding channel (3) is provided with a projection (4) that extends in the guiding direction on an inner circumference.

Description

Technical field [0001] The invention relates to a power semiconductor module according to the preamble of claim 1. Background technique [0002] One such power semiconductor module is known for example from DE 10 2006 006 425 B4. A pressure contact spring is introduced into a guide channel, which has a circular cross section. The guide channel is a housing or a component part of the housing made of plastic. Recently, in practice, the outer shell is made of polyamide. The use of polyamide has advantages in various aspects. However, corrosion of the pressure contact spring is sometimes observed when it is out of service for a long time. Summary of the invention [0003] The task of the present invention is to eliminate the disadvantages of the prior art. In particular, it should provide a power semiconductor module in which the corrosion of the pressure contact spring can be resisted in a simple and low-cost manner. [0004] This task is solved by the features of claim 1. A num...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L25/07H01L23/04
CPCH01L2924/01005H01L24/72H01L2924/01082H01L23/564H01L25/072
Inventor 托马斯・弗兰克雷纳尔・波浦
Owner SEMIKRON ELECTRONICS GMBH & CO KG