Photoelectric-conversion device, focus detection apparatus, and image-pickup system
A technology of photoelectric conversion and focus detection, which is applied in focusing devices, parts of TV systems, electrical components, etc., and can solve the problem of not considering monitoring operations.
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no. 1 example
[0023] A first embodiment of the present invention will be described with reference to the drawings. The first embodiment is exemplarily used for a photoelectric conversion device configured to perform phase difference autofocus (AF).
[0024] figure 1 An image pickup region provided in the phase difference AF photoelectric conversion device is schematically shown. Pairs of line sensor sections L1A and L1B, L2A and L2B, . . . , and LNA and LNB are provided on the image pickup area. A pair of line sensor sections are used to measure the amount of defocus of an object observed in a given area of the image pickup area. At least two pairs of line sensor sections are arranged to provide at least two ranging points, so that AF accuracy increases. Each of the line sensor sections includes unit pixels 11A and 12A, etc., operable in a low-sensitivity mode and a high-sensitivity mode. The level of a signal output for the same amount of incident light in the low sensitivity mode is...
no. 2 example
[0039] A second embodiment of the present invention will be described with reference to the drawings. The second embodiment provides a photoelectric conversion device including a memory cell part in addition to a sensor cell part and a transfer part.
[0040] Figure 5 A unit pixel 11A and a transfer member connected thereto are shown. The unit pixel 11A includes a sensor cell part 101 and a first memory cell part 301 . exist Figure 5 , the control electrodes and switches of MOS transistors are marked with the symbol Each of represents a signal transmitted from a control section (not shown).
[0041] Regarding the unit pixel 11A, the sensor unit section 101 includes a PD 116 as a photoelectric conversion element, MOS transistors 111 , 112 , 113 , 114 , and 115 , and a capacitive element (CP) 117 . When the MOS transistor 112 serving as a sensor cell component selection switch enters a conductive state, the MOS transistor 111 operates as an inverting amplifier having a g...
no. 3 example
[0068] Figure 11 is a block diagram showing parts related to the line sensor parts L1A and L2A, etc. in more detail. Each unit pixel includes a sensor cell part, a first memory cell part, and a second memory cell part, and is connected to a common output line. In addition, unit pixels disposed at positions equivalent to each other defined in the individual different line sensor sections are connected to a common transmission section via a common output line. Each transfer element is connected to a common buffer amplifier. The configuration of each of the line sensor sections L1B and L2B etc. figure 2 The configuration shown is the same.
[0069] Figure 12 show from Figure 11 The shown configuration extracts the line sensor section LS1, and particularly shows the unit pixel 11A and the transfer section connected thereto. The unit pixel 11A includes a sensor cell part 101 , a first memory cell part 301 and a second memory cell part 401 . exist Figure 12 , the symbol...
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