Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Digital still camera framework for supporting two-channel CMOS (Complementary Metal Oxide Semiconductor) sensor

A CMOS sensor and sensor technology, applied in the direction of picture signal generators, etc., can solve the problems of inability to further improve the resolution and the upper limit of magnification, and achieve the effect of reducing design complexity, saving costs, and reducing chip area.

Inactive Publication Date: 2011-08-31
SHANGHAI INFOTM MICROELECTRONICS
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, increasing the number of input images can further increase the magnification, but the magnification has a certain upper limit, and the resolution cannot be further improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Digital still camera framework for supporting two-channel CMOS (Complementary Metal Oxide Semiconductor) sensor
  • Digital still camera framework for supporting two-channel CMOS (Complementary Metal Oxide Semiconductor) sensor
  • Digital still camera framework for supporting two-channel CMOS (Complementary Metal Oxide Semiconductor) sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Next, referring to the drawings, a digital camera system according to an embodiment of the present invention will be described. Such as figure 1 As shown, the digital camera system according to the embodiment of the present invention is composed of a secondary CMOS sensor 101 , a primary CMOS sensor 102 , a digital camera main chip 103 and a system storage unit 104 . Connected between the secondary CMOS sensor 101 and the digital camera main chip 103 is a secondary CMOS sensor interface bus 107 . Connected between the main sensor 102 and the digital camera main chip 103 is the main CMOS sensor interface bus 108 . Connected between the digital camera main chip 103 and the system memory 104 is a memory bus 114 .

[0025] The secondary CMOS sensor 101 has a CMOS sensor array 105 and an integrated ISP pipeline 106. The Bayer-type Raw RGB image data output by the CMOS sensor array 105 is processed by the integrated ISP pipeline 106 to obtain YUV image data, and sent to the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a digital still camera (DSC) framework for supporting a two-channel CMOS (Complementary Metal Oxide Semiconductor) sensor. The channel I is an auxiliary sensor channel; the CMOS sensor processes Bayer type Raw RGB (Red, Green and Blue) image data captured by a CMOS sensor array by using a built-in image signal processing (ISP) unit and outputs YUV (Luma and Chroma) image data as the input of the channel I; the channel II is a main sensor channel; and the CMOS sensor directly outputs Bayer type Raw RGB image data as the input of the channel 2. The input of the channel II is subjected to the high-performance ISP integrated in a main chip to output YUV image data which is subjected to super-resolution image synthesis with the YUV image data input by the channel I. An image postprocessing unit is used for strengthening the luminance, contrast ratio, chroma and saturation of a synthesized image, carrying out various image effect processing and compressing synthesized high-resolution image data into a JPEG(Joint Photographic Experts Group) format for outputting and storing in a system storage unit.

Description

Technical field: [0001] This application relates to a digital camera (DSC) system architecture that supports dual-channel CMOS sensors. More specifically, this application relates to the synthesis of a low-resolution image captured by two low-resolution CMOS sensors by using super-resolution image reconstruction technology. Digital camera system architecture with dual-channel CMOS sensors for high-resolution images. Background technique: [0002] At present, there are two main types of CMOS image sensors available on the market: one type integrates a simple image processing unit (Image Signal Processing, ISP), which can complete auto focus (Auto Focus, AF), auto exposure (Auto Exposure) , AE) and automatic white balance (Auto White Balance, AWB) and other image processing processes, and output processed YUV image data; another type does not integrate ISP inside, and outputs unprocessed Bayer-type Raw RGB image data. [0003] Super-resolution technology utilizes information ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H04N9/04
Inventor 石亚飞李兴仁金荣伟
Owner SHANGHAI INFOTM MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com