Method for removing photoresist in deep N-well process

Abstract

The invention discloses a method for removing photoresist in a deep n-well process. The method comprises the following steps: ashing the surface of a semi-conductor wafer, wherein the ashing treatment comprises: controlling the ashing temperature at the surface of the wafer, such that the wafer is maintained to be under an ashing temperature of lower than 285 DEG C; cleaning the photoresist; and removing photoresist residues after cleaning. In prior arts of manufacturing wafers by using the deep n-well technology, tiny residues on the surfaces of the wafers can not be completely removed through an existing photoresist-removing process. According to the method provided by the present invention, the problem is solved, the consistency of semi-conductor components manufactured through the deep n-well technology is improved, and the performance of the semi-conductor components manufactured through the deep n-well technology is substantially improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for removing photoresist in a deep N well process. Background technique [0002] In the process of semiconductor manufacturing process, since the adoption of Deep N Well (Deep N Well) process can effectively suppress noise propagation, the Deep N Well process is widely used in the field of semiconductor manufacturing to manufacture low-noise semiconductor devices. [0003] In the process of manufacturing a semiconductor device using a deep N well process, it is necessary to remove the photoresist introduced by the mask link. Before cleaning the photoresist on the wafer surface, the photoresist on the wafer surface needs to be ashed to make the photoresist easy to clean. Since the ashing temperature directly affects the viscosity of the photoresist, when the ashing temperature is low, the photoresist will be very viscous, which increases the possibility of polluti...

AI Technical Summary

Problems solved by technology

[0009] In order to solve the problem that the photoresist removal process of the deep N well process in the prior art cannot completely remove the tiny photoresist residues remaining on the wafer surface of the deep N well process, and improve the consistency of semiconductor devices manufactured by the deep N well process , the invention provides a method for removing photoresist by deep N well process, the method for removing photoresist by described deep N well process comprises the following steps:

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