Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment

Abstract

The invention discloses a gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment. The gas path positive pressure system comprises a gas source and a plurality of positive pressure channels, wherein the plurality of positive pressure channels are connected with each other in parallel and respectively connected with the gas source; each positive pressure channel comprises a filter, a switching valve group, a positive pressure branch and a gas supply branch pipe, wherein the switching valve group is connected with the filter, the positive pressure branch and the gas supply branch pipe are connected in parallel between the gas source and the switching valve group so that the switching valve group communicates the gas source and the filter selectively through the positive pressure branch and the gas supply branch pipe, and the positive pressure branch comprises an electrically-controlled proportional valve. According to the gas path positive pressure system used for chemico-mechanical polishing, disclosed by the embodiment of the invention, the positive pressure channels are not affected with each other so that the added gas supply branch pipe is beneficial to shortening of aeration time of a chamber under the condition of not damaging pressure precision.

Description

technical field [0001] The invention relates to a gas path positive pressure system for chemical mechanical polishing, in particular to a chemical mechanical polishing equipment using the system. Background technique [0002] Chemical mechanical polishing is the most effective technique for global planarization of wafers in semiconductor manufacturing processes. In the field of chemical mechanical polishing copper / silicon polishing, the polishing head clamps the silicon wafer and presses the copper layer / silicon surface to be polished to the rotating polishing disc, and the effective and rapid copper removal is achieved through the friction of the polishing pad on the polishing disc and the corrosion of the polishing solution. / silicon removed. Among them, the polishing head can realize the global dynamic adjustment of the polishing pressure of the silicon wafer by controlling the chamber pressure of each annular area on the back of the silicon wafer. [0003] The interna...

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Problems solved by technology

[0004] In addition, for the inflation of some large volume chambers, the pressure is often started from the vacuum state, the required energy of the gas source is large, and the pressurization time is long. However, if the proportional valve with a large flow rate is replaced for pressurization, the accuracy will be lost. , so how to ensure the accuracy of pressurization and shorten the time of inflation is also the key to the design of the gas path control structure

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