PMOS (P-channel metal oxide semiconductor) transistor with embedded thyristor and switching circuit

Abstract

The invention provides a PMOS (P-channel metal oxide semiconductor) transistor with an embedded thyristor and a switching circuit. The PMOS transistor comprises a semiconductor substrate, a gate electrode formed on the surface of the semiconductor substrate, a source electrode, a diffusion area, a drain electrode and an N-type injection area, wherein the source electrode and the diffusion area are formed in the semiconductor substrate at both sides of the gate electrode; the drain electrode and the N-type injection area formed in the diffusion area; the doping type of the diffusion area is the same as those of the source electrode and the drain electrode, and the doping concentration of the diffusion area is less than those of the source electrode and the drain electrode; and the N-type injection area is electrically connected with the drain electrode, and the doping concentration of the N-type injection area is higher than that of the semiconductor substrate. The switching circuit has the advantage of better electrostatic protection capability.

Description

technical field [0001] The invention relates to the field of electrostatic protection circuit design, in particular to a PMOS transistor embedded with a thyristor and a switch circuit with electrostatic protection capability. Background technique [0002] In switching circuits, high-voltage field-effect transistor devices are usually used as switching devices. figure 1 A schematic diagram of an existing switching circuit is provided. The switch circuit includes: an input unit 100, an output unit 101, a switch transistor 102, a control unit 103 and a load unit 104, the input unit 100 is connected to the output unit 101 through the switch transistor 102, and the control unit 103 is connected to the switch transistor 102 , to control the switch transistor 102 to be turned on or off, and the load unit 104 is coupled to the connection node of the switch transistor 102 and the load unit 104 . [0003] further, figure 2 provided figure 1 The specific circuit diagram of the swi...

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is to provide a PMOS transistor and a switch circuit with a built-in thyristor, so as to solve the problem that the current switch circuit using a PMOS transistor as a switch device lacks electrostatic protection capability

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