Level shift circuit

A technology for converting circuits and levels, applied in the direction of logic circuit connection/interface layout, logic circuit coupling/interface using field effect transistors, etc., can solve the problems of small circuit delay, large circuit delay, logic errors, etc. Effects of delay and response speed

Active Publication Date: 2011-10-05
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem solved by the present invention is to provide a level conversion circuit with fast response speed and small circuit delay, which solves the proble

Method used

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Embodiment Construction

[0022] In the prior art, the first-stage inverter unit of the output circuit is a CMOS mirror inverter circuit, in which each transistor adopts thick-gate transistors in order to meet the withstand voltage requirements of the high operating voltage of the high-level line VDDH . However, when the highest level of the signal output by the shaping circuit is only VDDL, it may cause the problem that the NMOS transistor pair whose gate is connected to the previous stage is difficult to turn on and conduct due to insufficient gate voltage. In the present invention, the NMOS transistor of the first-stage inverter unit of the above-mentioned output circuit is selected as a thin-gate transistor, and a depletion-type thick-gate NMOS transistor pair is added in series with it to play a role of voltage division protection and improve The turn-on speed of NMOS transistors reduces circuit delay.

[0023] The level conversion circuit provided by the present invention is used to convert a hi...

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Abstract

The invention provides a level shift circuit which is used for shifting high-level input signal into low-level output signal. The level shift circuit comprises: VDDH, VDDL, GND, a shaping circuit and an output circuit. A first stage inverter unit of the shaping circuit comprises a pair of PMOS transistors, a first pair of NMOS transistors and a second pair of NMOS transistors. Drain electrodes of the pair of PMOS transistors are connected with grid electrodes of each other and source electrodes are connected with the VDDH. The first pair of NMOS transistors is connected in series with the second pair of NMOS transistors respectively, wherein the grid electrodes of the series-connected NMOS transistors are mutually connected with each other. The source electrodes of the first pair of NMOS transistors are grounding. The drain electrodes of the second pair of NMOS transistors are respectively connected with the drain electrodes of the pair of PMOS transistors. And the grid electrodes of the second pair of NMOS transistors are respectively connected with input terminal and output terminal of a finally stage inverter unit of the shaping circuit. The second pair of NMOS transistors is depletion-type thick grid transistors. The first pair of NMOS transistors is thin grid type transistors. The level shift circuit has a high speed responsibility and a small circuit delay.

Description

technical field [0001] The invention relates to a level shift circuit, in particular to a level shift circuit for converting a low-level signal into a high-level signal. Background technique [0002] In composite power supply circuits, especially SOC systems, the power supply voltage of each circuit unit is not completely consistent, and it is difficult to unify. The signal transmission between each circuit unit needs to be converted before communication can be carried out; The working voltage inside the chip (for example, 1.2V), but when transmitting signals between chips, it still needs to be carried out at a higher voltage (for example, 3.3V ~ 5V). Therefore, it is necessary to use a level conversion circuit as an input and output interface device of a chip or a circuit unit to realize the level conversion of the above-mentioned signals. [0003] In digital circuits, CMOS inverters are often used to form level conversion circuits. For example figure 1 An existing level...

Claims

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Application Information

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IPC IPC(8): H03K19/0185
Inventor 单毅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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