Thermoelectric device and forming method thereof
A kind of thermoelectric device and thermoelectric technology, applied in thermoelectric device components, manufacturing/processing of thermoelectric devices, thermoelectric devices that only use Peltier or Seebeck effect, etc., can solve the problem of poor thermoelectric cooler effect and increase the difficulty of packaging structure wiring and other problems, to achieve the effect of small-scale cooling, improve the cooling effect, and improve the cooling efficiency
Active Publication Date: 2014-09-03
SEMICON MFG INT (SHANGHAI) CORP +1
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[0007] The present invention provides a thermoelectric device to overcome the disadvantages of poor thermoelectric coolers in the prior art and the need to obtain current through additional connecting wires, which increases the wiring difficulty of the packaging structure
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[0036] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.
[0037] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. The protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth should be inc...
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A thermoelectric device and a method of forming the same, wherein the thermoelectric device includes: a semiconductor substrate; a plurality of isolation structures penetrating the semiconductor substrate, and n-type thermoelectric structures and p-type thermoelectric structures respectively located on both sides of the isolation structure, and the p The type thermoelectric structure and the n-type thermoelectric structure are arranged at intervals; a plurality of first conductive electrodes located on the upper surface of the semiconductor substrate, and a plurality of second conductive electrodes located on the lower surface of the semiconductor substrate; wherein the first conductive electrodes are electrically connected to adjacent n-type thermoelectric structures. The structure and the p-type thermoelectric structure, the second conductive electrode electrically connects the adjacent n-type thermoelectric structure and the p-type thermoelectric structure, and the first conductive electrode and the second conductive electrode connect all the n-type thermoelectric structures and the p-type thermoelectric structure in series. The thermoelectric device formed by the present invention has better cooling effect.
Description
technical field [0001] The invention relates to the application field of cooling of integrated circuit chips, in particular to a thermoelectric device and a forming method thereof. Background technique [0002] As the functions of integrated circuit chips become more and more powerful, the circuit structures they contain are also becoming larger and larger. Correspondingly, the heat generated by the operation of integrated circuit chips has also continued to increase. Overheating of an integrated circuit chip will cause its performance to degrade. Therefore, how to cool the integrated circuit chip has become an important subject concerned nowadays. [0003] A conventional method for cooling integrated circuit chips is to use convective fans and heat sinks for air cooling. However, the working method of air cooling will be subject to many limitations in the practical application of integrated circuit chips. For example, air cooling of integrated circuit chips is not suita...
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IPC IPC(8): H01L35/32H01L35/10H01L35/34H10N10/17H10N10/01H10N10/82
Inventor 三重野文健郭景宗
Owner SEMICON MFG INT (SHANGHAI) CORP