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Bidirectional controllable rectifying resistance-variable memory

A resistive memory and resistive switching technology, applied in static memory, digital memory information, information storage, etc., can solve the problems that affect the data retention performance of flash memory, resistive memory does not have rectification function, serious charge leakage, etc.

Inactive Publication Date: 2011-10-19
HUNAN NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

One of the most important problems is: as the thickness of the tunnel oxide layer becomes smaller and smaller, the charge leakage becomes more and more serious, which di

Method used

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  • Bidirectional controllable rectifying resistance-variable memory

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Experimental program
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Embodiment 1

[0015] Embodiment 1: refer to figure 1

[0016] The rectifying resistive memory includes a metal upper electrode 1, a lower electrode 2, and a resistive material 3 between the upper and lower electrodes. The resistive material of the present invention is a resistive thin film composed of +1-valent metal cations 4 mixed in the resistive material 3. or nanowire films. The resistive switch film or nanowire film forms a Schottky contact with the metal electrode; the concentration of oxygen vacancies generated in the resistive switch layer is controlled by +1-valent metal cations during the voltage turn-on process, and the movement of oxygen vacancies is caused by pulse triggering to adjust the upper and lower barriers The height realizes bidirectional controllable rectification.

[0017] The main conductive mechanism of the resistive variable memory of the present invention is the conduction of oxygen vacancies. After the voltage is turned on, a certain amount of oxygen vacancie...

Embodiment 2

[0019] Weigh 1.63g sodium tungstate (Na 2 WO 4 2H 2 O) powder, 2.0 g potassium sulfate (K 2 SO 4 ) powder and 1.26g oxalic acid (C 2 h 2 o 4 2H 2 O), and put the three reagents into the Erlenmeyer flask and mix well. Gently inject 50 ml of deionized water (H 2 O), and stirred, and stirred on a magnetic heating stirrer for 25 minutes. Use a hose to drop a small amount of hydrochloric acid into the well-stirred Erlenmeyer flask to adjust the pH value to 1-1.5. Take out 40ml of the device from the prepared solution and put it in a hydrothermal reaction ax with a volume of 50ml, place the hydrothermal reaction kettle in an electric constant temperature blast drying oven, and react at 180 degrees Celsius for 24 hours. Centrifuge the obtained solution to obtain a precipitated substance, put it in a clean glass dish, place the glass dish in a constant temperature blast drying oven, and dry it at an appropriate temperature to obtain sodium-doped WO3 nanowires. The obtained ...

Embodiment 3

[0022] Embodiment 3: Au, Ag, Pt, Pd, Al, Cu or W bottom electrode 2 is grown by PVD (Physical Vapor Deposition) method on a silicon substrate with an oxide layer of 100 nm. A WO3 film doped with +1 valent sodium, potassium or rubidium ions is grown on the bottom electrode by PLD (Pulsed Laser Deposition). The specific process is as follows: mix the tungsten acid compound and tungsten trioxide powder of the metal element to be added according to the required ratio, so that the mass percentage of the metal element added is 0.01% to 1% of the resistive material. After the mixture is pressed at a pressure of 0.1 mbar to 0.2 mbar for 10 to 20 minutes, it is sintered in air at 630 degrees Celsius for 3 days. The laser power of PLD is 200-300mw, and the resistive layer 3 of 10-50nm is obtained by precipitation for 5-10 minutes, and YxWO3 can be obtained by changing the ratio of tungsten acid compound and tungsten trioxide powder doped with metal elements (Y is sodium and potassium o...

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Abstract

A bidirectional controllable rectifying resistance-variable memory comprises an upper metal electrode, a lower metal electrode and a resistance-variable material between the upper electrode and the lower electrode; the resistance-variable material is a resistance-variable film with +1 valence metal cations or a nanometre wire film doped with +1 valence metal cations; the resistance-variable film or the nanowire film forms schottky which can be contacted with the metal electrodes; oxygen vacancy concentration generated in a resistance-variable layer is controlled through the +1 valence metal cations; and the movement of the oxygen vacancy is caused by pulse triggering so as to adjust the height of upper and lower barriers for bidirectional controllable rectification. In the resistance-variable memory, the number of the oxygen vacancy caused by the doping of the metal cations is large; the movement of the oxygen vacancy between the upper electrode and the lower electrode is controlled to realize reversible switch among bidirectional conduction, positive rectification and negative rectification so that a novel rectifying device can be developed. Simultaneously, the resistance-variable memory can be used for constructing a tristable memory; three electrical memory states of the positive rectification, the reverse rectification and the bidirectional conduction exist in the tristable memory; the logical values of the three memory states can be obtained through the method of current reading; and the mutual switch among the memory states is realized through the method of the pulse triggering.

Description

technical field [0001] The invention relates to a bidirectional controllable rectification resistance variable memory. Background technique [0002] As portable electronic products are more and more widely used, the demand for large-capacity non-volatile memory is becoming more and more urgent. Traditional Erasable Programmable Read-Only Memory (EPROM) and Electrically Erasable Programmable Read-Only Memory (EEPROM) 2 PROM) has been far from meeting today's market demand. With the advent of the 28nm technology node of the integrated circuit process, the traditional Flash non-volatile memory has also encountered a series of problems. One of the most important problems is: as the thickness of the tunnel oxide layer becomes smaller and smaller, the charge leakage becomes more and more serious, which directly affects the data retention performance of the Flash memory. As a result, various new next-generation non-volatile memories have emerged, such as ferroelectric memory (Fe...

Claims

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Application Information

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IPC IPC(8): H01L29/68G11C11/56G11C13/00
Inventor 唐东升郭杰
Owner HUNAN NORMAL UNIVERSITY