Unlock instant, AI-driven research and patent intelligence for your innovation.

Shielding for integrated capacitors

A capacitor and ground shielding technology, applied in capacitors, electric solid devices, circuits, etc., can solve problems such as circuit performance degradation

Active Publication Date: 2014-04-02
XILINX INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in other applications, such as when the capacitor is used in a signal path (i.e., as a coupling capacitor or switched capacitor), noise coupling can seriously degrade circuit performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shielding for integrated capacitors
  • Shielding for integrated capacitors
  • Shielding for integrated capacitors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] figure 1 A circuit diagram of a circuit 100 employing capacitors 102, 104 in accordance with embodiments of the present invention. The top node 108 of the capacitor 104 can be switched to be connected or disconnected from a high impedance input 114 of an amplifier 116 . Bottom node 112 is connected to a switch. The top node 106 of the feedback capacitor 102 is also connected to the high impedance input 114 of the amplifier 116 and the bottom node 110 is connected to the output 118 of the amplifier 116 . The feedback capacitor 102 is switchable to short circuit by closing the switch 119 . The coupling capacitor 104 has a top node 108 shielded by a bottom node shield 120 that substantially surrounds the top node 108 and reduces the impact of the top node 108 on the circuit 100 by conductive structures electrically connected to the bottom node. Parasitic capacitive coupling of nodes. The connection to the top node 108 is made through a gap in the bottom node shield 120...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A capacitor (220) in an integrated circuit ("IC") includes a core capacitor portion (201 ) having first conductive elements (T1, T2, T3, T4) electrically connected to and forming a part of a first node of the capacitor formed in a first layer (M3) and second conductive elements (B1, B2, B3) electrically connected to and forming a part of a second node of the capacitor formed in the first layer. The first and second conductive elements alternate in the first conductive layer. Third conductive elements (T) electrically connected to and forming a part of the first node are formed in a second layer (M2) adjacent to the first layer (M3). The capacitor also includes a shield capacitor portion (203) having fourth conductive elements (238, B, B' ) formed in at least first, second, third, and fourth layers (M3, M2, M4, Poly). The shield capacitor portion is electrically connected to and forms a part of the second node of the capacitor and surrounds the first and third conductive elements.

Description

technical field [0001] The present invention relates to capacitors formed in integrated circuits (ICs), commonly referred to as integrated capacitors. Background technique [0002] Methods of manufacturing ICs typically include: a front-end processing sequence in which various electrical components, such as transistors, are formed on a semiconductor substrate; and, a back-end processing sequence that generally includes forming dielectric materials and patterns with conductive vias Alternating layers of conductive material (typically metal) are patterned or other techniques are used to interconnect the metal layers to form a three-dimensional wiring structure that connects electrical components to other electrical components and terminals of the IC. [0003] Capacitors are used in IC systems for various purposes. In many instances, it is desirable to incorporate (integrate) a capacitor into the IC chip. A simple way is to form two conductive plates with an intervening diele...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/02H01L27/08H01L27/02H10N97/00
CPCH01L2924/0002H01L27/0207H01L28/60H01L23/5225H01L23/5223H01L2924/3011H01L27/0805H01L2924/00H01L27/02H01L23/60H01L21/02H01L29/00
Inventor 派翠克·J··昆恩
Owner XILINX INC