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LED preparation method to improve light extraction efficiency

A technology of light extraction efficiency and light-emitting layer, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as difficult contact and reflection effect, achieve the effect of improving light extraction efficiency and yield, and solving poor adhesion

Active Publication Date: 2016-12-14
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, due to the high-energy impact in laser lift-off, it is difficult to make a good contact and reflection effect between the high-reflectivity metal and the GaN P-surface

Method used

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  • LED preparation method to improve light extraction efficiency
  • LED preparation method to improve light extraction efficiency
  • LED preparation method to improve light extraction efficiency

Examples

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preparation example Construction

[0055] The present invention proposes a LED preparation method for improving light extraction efficiency, which includes:

[0056] In step a, the buffer layer, n-GaN, light-emitting layer, and p-GaN epitaxial film are grown successively on the sapphire substrate, and then the transparent conductive layer is evaporated and alloyed to grow SiO 2 The protective layer;

[0057] Step b apply viscose to SiO 2 on the protective layer and cured together with the temporary support substrate;

[0058] Step c is to perform laser lift-off of the sapphire substrate;

[0059] Step d roughens the N surface of the peeled epitaxial film;

[0060] In step e, a transparent, curable adhesive material layer is made on the N surface of the epitaxial film, and the adhesive material layer is cured;

[0061]In step f, prepare a reflective layer, and perform high-temperature curing together with the above-mentioned adhesive material layer;

[0062] In step g, an electrode-shaped electrode groove i...

Embodiment 3

[0073] Embodiment three of the present invention. The steps of this example are basically the same as those of Example 2. Compared with the second embodiment, the temporary support substrate of this example is made of sapphire. Embodiment three is briefly described as follows:

[0074] After the buffer layer, n-GaN, light-emitting layer, p-GaN and other thin films are grown sequentially on the sapphire substrate by MOCVD, ITO is evaporated and treated with a 500-degree alloy. Apply the viscose to the SiO 2 On the protected ITO layer, and bonded with the temporary support sapphire substrate, cured at 100 degrees for 60 minutes, Kr laser, power 500mW, laser peeling off the sapphire surface. After the sapphire is peeled off, the gallium nitride surface is cleaned and roughened with an alkaline solution (KOH solution) at 80 degrees; the water glass is coated on the gallium nitride roughened surface, and then cured at 80 degrees for 15 minutes. The thickness of the transparent ...

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Abstract

The invention discloses an LED preparation method for improving light extraction efficiency, and relates to a preparation process of a semiconductor light-emitting device. The purpose of this method is to improve light extraction efficiency and product yield. The technical scheme includes: after an epitaxial film is formed on a sapphire substrate, a transparent conductive layer is vapor-deposited, and an alloy treatment is performed to grow a SiO2 protective layer; the adhesive is applied on the SiO2 protective layer, and cured together with a temporary supporting substrate; peeling off the sapphire substrate; roughening the N side of the peeled epitaxial film; making a transparent and curable adhesive material layer on the N side of the epitaxial film, and curing the adhesive material layer; preparing a reflective layer , perform high-temperature curing together with the above-mentioned adhesive material layer; make the N electrode in the groove on the layer above the roughened surface; evaporate the bonding metal layer and perform eutectic bonding with the permanent substrate that is electrically and thermally conductive; remove the temporary support The substrate, the SiO2 protective layer, and the P electrode are made on the transparent conductive layer.

Description

technical field [0001] The invention relates to a preparation process of a semiconductor light emitting device. Background technique [0002] The sapphire substrate is the main substrate for GaN-based LED epitaxial growth, and its conductivity and heat dissipation are relatively poor. After removing the sapphire substrate by laser lift-off technology, the LED is made into a vertical structure, which can effectively solve the heat dissipation and light emission problems. . The usual practice is to use the GaN N surface to emit light, and look for reflectors and protective layer metals that match the P surface. However, the use of laser to lift off the sapphire substrate, the current low yield has been the bottleneck of the industrialization of GaN-based LED thin film chips. Due to the stress caused by the difference in thermal expansion coefficient between sapphire, GaN film and support substrate, or the poor adhesion between reflective metal and GaN P surface, the GaN film...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 陈栋赵汉民周印华
Owner LATTICE POWER (JIANGXI) CORP
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