Semiconductor transistor structure and making method thereof
A technology of transistors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as band-band tunneling, impurity distribution changes, and impurity diffusion
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[0058] See Figure 5-Figure 23 As shown, the present invention provides a method for manufacturing a semiconductor transistor structure, including the following steps:
[0059] Step 1: Select silicon-on-insulator 10 and dope the top silicon 12, the doping type is N-type or P-type, and the doping concentration is 1×10 15 cm -3 -1×10 21 cm -3 ;
[0060] Step 2: Growing a layer of SiO on the surface of the top silicon 12 by thermal oxidation 2 Hard mask 13; of which SiO 2 The thickness of the hard mask 13 is 10-50 nanometers;
[0061] Step 3: Through photolithography and SiO 2 Etching, predefine the device area on the SiO2 hard mask 13, and predefine the SiO after the device area 2 Hard mask 13 includes source SiO 2 Hard mask 131, drain SiO 2 Hard mask 132 and channel area fin structure SiO 2 Hard mask 133, SiO 2 The area where the hard mask 13 is etched away exposes the top layer silicon 12;
[0062] Step 4: By low pressure chemical vapor deposition on SiO 2 The hard mask 13 and the exp...
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[0080] See Figure 1-Figure 4 As shown, a semiconductor transistor structure of the present invention includes:
[0081] A silicon-on-insulator 10, the silicon-on-insulator 10 includes a buried oxygen layer 11 and a top silicon 12, wherein the buried oxygen layer 11 has a thickness of 200 nm, the top silicon 12 has a thickness of 90 nm, and the top silicon 12 has a crystal plane of (110 ), there is a recess 111 in the middle of the top silicon 12, and the two sides of the recess 111 are the source 121 and the drain 122 of the top silicon 12 respectively. The source 121 and the drain 122 are connected by 25 silicon fin-like structures 123 A channel is formed. The source 121, drain 122, and silicon fin structure 123 of the top silicon 12 are all doped with P-type boron; the surface of the source 121, drain 122, and silicon fin structure 123 of the top silicon 12 Make a SiO 2 Dielectric layer 124; the doping concentration of the source region 121 and the drain region 122 of the top ...
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