Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Acetic acid ITO (Indium Tin Oxide) etching liquid and preparation process thereof

A preparation process and etching solution technology, applied in the direction of surface etching compositions, chemical instruments and methods, etc., can solve the problems affecting the image accuracy and quality of high-density thin wires, and achieve moderate speed, stable reaction, and strong unity. Effect

Active Publication Date: 2014-06-11
JIANGYIN RUNMA ELECTRONICS MATERIAL
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In recent years, while people's demand for liquid crystal displays has been increasing, higher requirements have been placed on product quality and screen accuracy. The composition and particle size of the ITO etching solution directly affect the etching effect, which determines the quality of the circuit board manufacturing. The quality of the process affects the accuracy and quality of the high-density thin wire image

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The invention relates to an acetic acid-based ITO etching solution, which can be uniformly prepared from four raw materials: hydrochloric acid, acetic acid, potassium chloride and pure water.

[0027] Wherein, the percentage by weight of each raw material in the four kinds of raw materials can be respectively: 23% hydrochloric acid, 7% acetic acid, 0.3% potassium chloride, and the rest are pure water; when the purity of raw materials changes, its proportioning should be adjusted . The concentrations of the hydrochloric acid and the acetic acid can be respectively: 37% hydrochloric acid and 99.8% acetic acid; the purity of the potassium chloride can be 98%. The rest of the impurity components in the potassium chloride raw material are sodium chloride, water and a very small amount of impurities insoluble in the etching solution.

[0028] Wherein, in the acetic acid-based ITO etching solution, there are no more than 100 particles with a particle size greater than 0.3 μm ...

Embodiment 2

[0042] The invention relates to an acetic acid-based ITO etching solution, which can be uniformly prepared from four raw materials: hydrochloric acid, acetic acid, potassium chloride and pure water.

[0043] Wherein, the percentage by weight of each raw material in the four kinds of raw materials can be respectively: hydrochloric acid 24%, acetic acid 8%, potassium chloride 0.4%, and the rest is pure water; when the purity of raw materials changes, its proportioning should be adjusted .

[0044] Wherein, the concentrations of the hydrochloric acid and the acetic acid can be respectively: 37% hydrochloric acid and 99.8% acetic acid; the purity of the potassium chloride can be 98.5%.

[0045] Wherein, in the acetic acid-based ITO etching solution, there are no more than 100 particles with a particle size greater than 0.3 μm per 100 kg, impurity anions are no more than 30 ppb, and impurity cations are no more than 0.05 ppb.

[0046] Taking the above-mentioned ITO etching solutio...

Embodiment 3

[0055] The invention relates to an acetic acid-based ITO etching solution, which can be uniformly prepared from four raw materials: hydrochloric acid, acetic acid, potassium chloride and pure water.

[0056] Wherein, the percentage by weight of each raw material in the four kinds of raw materials can be respectively: hydrochloric acid 25%, acetic acid 9%, potassium chloride 0.5%, and the rest is pure water; when the purity of raw materials changes, its proportioning should be adjusted . The concentrations of the hydrochloric acid and the acetic acid can be respectively: 37% hydrochloric acid and 99.8% acetic acid; the purity of the potassium chloride can be 99%. The rest of the impurity components in the potassium chloride raw material are sodium chloride, water and a very small amount of impurities insoluble in the etching solution.

[0057] Wherein, in the acetic acid-based ITO etching solution, there are no more than 100 particles with a particle size greater than 0.3 μm p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
purityaaaaaaaaaa
Login to View More

Abstract

The invention discloses an acetic acid ITO (Indium Tin Oxide) etching liquid and a preparation process thereof. The acetic acid ITO etching liquid is prepared by uniformly mixing hydrochloric acid, acetic acid, inorganic salt chloride and pure water. The ITO etching liquid preparation process comprises the following steps of : under the normal pressure and temperature, controlling or removing foreign ions in the hydrochloric acid and the acetic acid by strong acidic ion-exchanging resin; maintaining the rotation speed of the mixer of a dosing tank; sequentially adding part of the pure water, acetic acid, hydrochloric acid, inorganic salt chloride and the rest of the pure water in the dosing tank; and fully mixing, filtering the mixture by a filter, and finally preparing the acetic acid ITO etching liquid. In the invention, the acetic acid ITO etching liquid has small granularity, high purity, strong etching monotony, can control the etching angle of the transparent conducting film of an ITO semi-conductor and the etching mount of different metal layers, and has no influences to client terminal equipment and personnel.

Description

technical field [0001] The invention relates to a composition for chemical etching of metal materials and a preparation process thereof, in particular to an acetic acid-based ITO etching solution and a preparation process. Background technique [0002] Etching is the technique of removing material using chemical reaction or physical impact. Etching technology is divided into wet etching and dry etching, wherein wet etching uses chemical reagents to achieve the purpose of etching through chemical reactions. Thin-film field-effect transistor liquid crystal display (TFT~LCD), light-emitting diode (LED), organic light-emitting diode (OLED) and other industries use hydrochloric acid and nitric acid to etch the indium tin oxide semiconductor transparent conductive film (ITO) in the panel process. Mix the aqueous solutions. However, the mixed aqueous solution of hydrochloric acid and nitric acid is a general-purpose ITO etching solution, which has strong corrosion ability. During...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/06
Inventor 戈士勇
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com