Indium tin oxide (ITO) etching solution for high-generation panel

A generation of flat plate and etching solution technology, applied in the direction of surface etching composition, chemical instruments and methods, etc., can solve the problems of poor control of etching angle and time, and achieve the effect of clear etching line edges, strong singleness, and moderate speed

Inactive Publication Date: 2019-12-13
合肥中聚和成电子材料有限公司
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is: in order to solve the problem that the etching solution used in the existing industry is difficult to control the etching angle time, a kind of ITO etching solution for high-generation flat panel is provided

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1, an ITO etchant for high-generation flat panels, including hydrochloric acid, acetic acid, metal salts, surfactants, defoamers and water are mixed in proportion to each raw material, and the weight ratio of each raw material is: hydrochloric acid 10~ 30%, acetic acid 1-10%, metal salt 0.1-1%, surfactant 0.05-0.5%, defoamer 0.1-1%, water balance.

[0026] The weight ratio of each raw material is: 22% of hydrochloric acid, 7% of acetic acid, 0.5% of metal salt, 0.2% of surfactant, 0.07% of defoamer, and the rest of water. The salt uses potassium hydrochloride, the water uses pure water, the impurity ions in the water do not exceed 100ppm, the concentration of the hydrochloric acid is 35%, the concentration of acetic acid is 90%, and the purity of the potassium hydrochloride is 98%.

[0027] The preparation method of described a kind of high-generation plate ITO etchant, comprises the steps:

[0028] Step 1: Add the strong-acid cation exchange resin into hydr...

Embodiment 2

[0033] Embodiment 2, an ITO etchant for high-generation flat plates, including hydrochloric acid, acetic acid, metal salts, surfactants, defoamers and water are mixed in proportion to each raw material, and the weight ratio of each raw material is: hydrochloric acid 10~ 30%, acetic acid 1-10%, metal salt 0.1-1%, surfactant 0.05-0.5%, defoamer 0.1-1%, water balance.

[0034] The weight ratio of each raw material is: 22% of hydrochloric acid, 7% of acetic acid, 0.5% of metal salt, 0.2% of surfactant, 0.07% of defoamer, and the rest of water. The salt uses potassium hydrochloride, the water uses pure water, the impurity ions in the water do not exceed 100ppm, the concentration of the hydrochloric acid is 35%, the concentration of acetic acid is 90%, and the purity of the potassium hydrochloride is 98%.

[0035] The preparation method of described a kind of high-generation plate ITO etchant, comprises the steps:

[0036] Step 1: Add the strong-acid cation exchange resin into hydr...

Embodiment 3

[0042] Embodiment 3, an ITO etchant for a high-generation flat plate, including hydrochloric acid, acetic acid, metal salt, surfactant, defoamer and water are mixed in proportion to each raw material, and the weight ratio of each raw material is: hydrochloric acid 10~ 30%, acetic acid 1-10%, metal salt 0.1-1%, surfactant 0.05-0.5%, defoamer 0.1-1%, water balance.

[0043] The weight ratio of each raw material is: 22% of hydrochloric acid, 7% of acetic acid, 0.5% of metal salt, 0.2% of surfactant, 0.07% of defoamer, and the rest of water. The salt uses potassium hydrochloride, the water uses pure water, the impurity ions in the water do not exceed 100ppm, the concentration of the hydrochloric acid is 35%, the concentration of acetic acid is 90%, and the purity of the potassium hydrochloride is 98%.

[0044] The preparation method of described a kind of high-generation plate ITO etchant, comprises the steps:

[0045] Step 1: Add the strong-acid cation exchange resin into hydroc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
purityaaaaaaaaaa
Login to view more

Abstract

The invention discloses an indium tin oxide (ITO) etching solution for a high-generation panel. The ITO etching solution is prepared by mixing raw materials comprising hydrochloric acid, acetic acid,a metal salt, a surfactant, a defoaming agent and water according to a certain ratio. The weight proportions of the raw materials are as the follows: 10-30% of hydrochloric acid, 1-10% of acetic acid,0.1-1% of the metal salt, 0.05-0.5% of the surfactant, 0.1-1% of the defoaming agent and the balance of water; and preferably the weight proportions of the raw materials are as the follows: 22% of hydrochloric acid, 7% of acetic acid, 0.5% of the metal salt, 0.2% of the surfactant, 0.07% of the defoaming agent and the balance of water. The metal salt is alkaline metal salt, wherein the alkali metal salt is potassium hydrochloride; the water is pure water, wherein the concentration of impurity ions in the water is not higher than 100 ppm; the concentration of the hydrochloric acid is 35%, theconcentration of the acetic acid is 90%, and purity of the potassium hydrochloride is 98%. According to the invention, no etching residues are generated in an etching process of the ITO etching solution; foaming is effectively inhibited and generation of a large amount of foam is avoided; an amorphous ITO film can be etched with high efficiency and high precision under mild working conditions; andthe process is very convenient to operate and is easy to control.

Description

technical field [0001] The invention belongs to the technical field of etching solution preparation, in particular to an ITO etching solution for high-generation flat panels. Background technique [0002] The high-generation flat panel is a liquid crystal panel produced by the high-generation production line. The high-generation line mainly produces large-size LCD panels above 32 inches. Generally, the high-generation line is defined as the sixth-generation line and above. The generation line refers to the size of the glass substrate. The larger the generation line, the larger the area of ​​the panel, and the larger the number of small LCD panels that can be cut out. Indium tin oxide (ITO) conductive film has many advantages such as low resistivity, good light transmission, good high temperature stability and simple preparation and graphic processing technology. It is an ideal transparent electrode material and is widely used in LCD, PDP , FED, OLED / PLED and other flat pane...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06
CPCC09K13/06
Inventor 梁小朝连杰姚浩川黄德新
Owner 合肥中聚和成电子材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap