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Semiconductor light-emitting device provided with transparent organic supporting base plate and preparation method for semiconductor light-emitting device

A technology for supporting substrates and light-emitting devices, applied to semiconductor devices, electrical components, circuits, etc., to achieve the effects of reduced manufacturing costs, high light extraction efficiency, and low cost

Inactive Publication Date: 2012-01-18
南昌硅基半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although LED lighting based on InGaAlN semiconductor materials has high luminous efficiency, the cost is still high compared to lighting requirements, that is, the cost per lumen of light needs to be greatly reduced to achieve Make LED lighting universally replace existing lighting fixtures

Method used

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  • Semiconductor light-emitting device provided with transparent organic supporting base plate and preparation method for semiconductor light-emitting device
  • Semiconductor light-emitting device provided with transparent organic supporting base plate and preparation method for semiconductor light-emitting device
  • Semiconductor light-emitting device provided with transparent organic supporting base plate and preparation method for semiconductor light-emitting device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] refer to figure 1 and figure 2 , to illustrate Embodiment 1 of the present invention.

[0050] First, a layer of semiconductor light-emitting layer: gallium nitride transition layer is grown on a sapphire growth substrate by metal organic chemical vapor deposition (MOCVD), and then N-type gallium nitride layer 1.1 (that is, N-type conductive layer) is grown sequentially. , an indium gallium nitrogen multiple quantum well layer 1.2 and a p-type gallium nitride layer 1.3 (that is, a p-type conductive layer), and the p-type gallium nitride layer 1.3 is activated by a thermal annealing process. Then on the surface of the P-type gallium nitride layer 1.3 (that is, the first surface of the semiconductor light-emitting stack) through a mask to form figure 2 The bar frame 2.1 shown by the solid line, and the P-type gallium nitride layer 1.3 and the indium gallium nitrogen multiple quantum well layer 1.2 in the bar frame 2.1 are removed by a reactive ion etching process unt...

Embodiment 2

[0052] refer to image 3 and Figure 4 , to illustrate Embodiment 2 of the present invention.

[0053] First, a GaN transition layer is grown on a silicon growth substrate by metal-organic chemical vapor deposition (MOCVD), and then N-type GaN layer 3.1, InGaN multi-quantum well layer 3.2, P-type GaN layer 3.3, and activate the P-type GaN layer 3.3 through a thermal annealing process. Then on the surface of the P-type gallium nitride layer 3.3 through a mask to form Figure 4 The circular hole 4.1 shown by the solid line, and the P-type gallium nitride layer 3.3 and the multi-quantum well layer 3.2 in the circular hole 4.1 are removed by a reactive ion etching process until the N-type gallium nitride layer 3.1 is exposed. Then use the electron beam evaporation process to evaporate a layer of silver reflective ohmic electrode 3.4 on the surface of the sample, and use the photolithography process to make the reflective ohmic layer 3.4 only distributed on the surface of the P-...

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Abstract

The invention discloses a semiconductor light-emitting device provided with a transparent organic supporting base plate and a preparation method for the semiconductor light-emitting device. The semiconductor light-emitting device comprises a semiconductor light-emitting lamination provided with a first surface and a second surface, and is characterized in that: the first surface of the semiconductor light-emitting lamination is a P-type conducting layer; one or more pits of which the bottom parts are N-type conducting layers are formed on part area of the first surface; a P-type ohmic electrode is formed on the P-type conducting layer, and N-type ohmic electrodes are formed on the N-type conducting layers; and a layer of supporting base plate made of a non-light tight organic material is formed on the second surface of the semiconductor light-emitting lamination. The light emitted by the semiconductor light-emitting lamination can be shot out by passing through the supporting base plate. The semiconductor light-emitting device adopts an upside-down structure which is favorable for light emitting, so the light extraction efficiency and the reliability of a chip can be improved, and semiconductor light-emitting device has the characteristic of high heat dispersion performance. By the preparation method of the semiconductor light-emitting device, the manufacturing cost can be greatly reduced, and then the cost of the semiconductor light-emitting device is low, and the defect of high manufacturing cost of the conventional flip chip on the market is overcome.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device, in particular to a semiconductor light-emitting device with a transparent organic support substrate and a preparation method thereof. Background technique: [0002] Light-emitting diodes (LEDs) have a wide range of uses. With the improvement of their luminous efficiency and the continuous decline of manufacturing costs, they have begun to enter the lighting market in recent years, and the market scale is constantly expanding. High-brightness LEDs are generally made of InGaAlN or InGaAlP semiconductor materials, of which InGaAlN semiconductor materials can be used to manufacture blue, green and ultraviolet LEDs, and blue light-emitting chips can be used with yellow phosphors to produce white LEDs. LED, which is the main preparation method of LED for lighting at present. Although LED lighting based on InGaAlN semiconductor materials has high luminous efficiency, the cost is still high comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/38H01L33/56
Inventor 汤英文王立江风益
Owner 南昌硅基半导体科技有限公司
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