Megasonic cleaning head and megasonic cleaning system provided with same

Abstract

The invention provides a megasonic cleaning head and a megasonic cleaning system provided with the same. The cleaning head comprises a transducer and a resonator which is used for transmitting energy from the transducer. The resonator comprises an upper surface and a lower surface and the upper surface is coupled to the transducer; and a vacuum hole array which not penetrates through the upper surface and the lower surface are arranged in the resonator. the megasonic cleaning head provided by the invention has the beneficial effect that, because of the adoption of the resonator internally provided with a non-through vacuum hole array in cylindrical shape or other geometrical shapes, the non-homogeneity of vibration waves is eliminated through compensating consumption effect achieved when megasonic waves are reflected many times in the resonator, so that the uniform distribution of megasonic energy is realized. When ultrapure water or chemical liquid is sprayed in a semiconductor, impurities on the semiconductor are washed off through uniform fluid waves which are generated by the megasonic wave and then the impurities are brought away by the flowing of the liquid, so that the semiconductor is cleaned and the damages to the semiconductor are smaller.

Description

technical field [0001] The invention relates to the field of semiconductor cleaning technology, in particular to a megasonic cleaning head and a megasonic cleaning system with the cleaning head. Background technique [0002] With the rapid development of submicron and deep submicron ultra-large-scale integrated circuits (ULSI) following "Moore's Law", the design line width has decreased sharply, and the volume of semiconductor chips has become smaller and smaller. How to control the mechanical damage of silicon wafer surface materials , and under the premise of protecting the flatness of the silicon wafer surface, minimizing the defect density of the silicon wafer and controlling its defect rate have become a major challenge in today's semiconductor cleaning technology. The structure of control electrodes and capacitors below the 65nm node becomes more and more fragile. As the line width of integrated circuits becomes smaller and smaller, the particles that can affect the d...

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Problems solved by technology

However, there are still some defects in the control of the direction and uniformity of the megasonic energy. During the cleaning process, the energy generated perpendicular to the silicon grid makes it prone to bending deformation and even root fracture due to shear force, causing damage to the semiconductor.

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