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Semiconductor devices and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as accumulation of impurities

Inactive Publication Date: 2012-02-08
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Exemplary embodiments of the present invention relate to a semiconductor device capable of solving the problem of accumulation of impurities on an insulating layer even if the concentration of impurities in a polysilicon layer is increased, and a method of forming the same

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  • Semiconductor devices and method of forming the same
  • Semiconductor devices and method of forming the same
  • Semiconductor devices and method of forming the same

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Embodiment Construction

[0022] Some exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The accompanying drawings are provided to enable those of ordinary skill in the art to understand the scope of embodiments of the present invention.

[0023] Figure 1A to Figure 1D is a cross-sectional view illustrating a method of forming a semiconductor device according to an exemplary embodiment of the present invention. in particular, Figure 1A to Figure 1D is a cross-sectional view illustrating a method of forming a floating gate of a semiconductor memory device.

[0024] see Figure 1A , an insulating layer 103 and a polysilicon layer 105 are formed over a semiconductor substrate 101 including an isolation region and an active region.

[0025] The insulating layer 103 is formed to insulate gate patterns such as floating gates. Specifically, the insulating layer 103 is used as a tunnel dielectric layer through which electrons pass ...

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Abstract

A method of forming semiconductor devices includes stacking an insulating layer and a polysilicon layer over a semiconductor substrate, forming a region where nitrogen (N) is scattered in a place adjacent to a surface of the polysilicon layer within the polysilicon layer using a plasma method, and depositing a doped polysilicon layer on the polysilicon layer including the region where nitrogen (N) is scattered.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2010-0071423 filed on July 23, 2010, the entire contents of which are incorporated herein by reference. technical field [0003] Exemplary embodiments of the present invention relate to a semiconductor device and a method for forming the same, and more particularly, to a method for making impurities accumulated on an insulating layer under a polysilicon layer even if the concentration of impurities contained in the polysilicon layer is increased. Reduced / minimized semiconductor devices and methods of forming the same. Background technique [0004] Generally, a polysilicon layer may be used as a gate pattern of a semiconductor device. For example, in a NAND flash memory device, a polysilicon layer may be used to form a floating gate into which electrons are to be injected or from which electrons are to be discharged. A gate pattern such as a floati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/283H01L21/8247H01L29/423H01L27/115H10B69/00
CPCH01L29/40114H10B41/30H01L21/324
Inventor 高旻圣
Owner SK HYNIX INC