Multi-wavelength integrated infrared semiconductor laser light source

A laser light source and semiconductor technology, applied in semiconductor lasers, semiconductor laser devices, lasers, etc., can solve the problems of off-axis emission and low emission accuracy, and achieve the effects of good versatility, small size, integration and high degree of automation

Inactive Publication Date: 2013-03-27
ORDNANCE TECH RES INST OF THE GENERAL ARMAMENT DEPT PLA
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a multi-wavelength integrated infrared semiconductor laser light source to solve the problems of low emission accuracy and off-axis emission in the existing multi-wavelength laser light source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-wavelength integrated infrared semiconductor laser light source
  • Multi-wavelength integrated infrared semiconductor laser light source
  • Multi-wavelength integrated infrared semiconductor laser light source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] like figure 1 As shown, the multi-wavelength integrated infrared semiconductor laser light source of the present invention includes a coded control module 1, an integrated drive power supply 2, an integrated laser emitting unit 3, a rotating positioning type emitting objective lens group 4 and a stepping motor drive system 5, a total of five part.

[0028] The encoding control module 1 includes an interface circuit 12 solidified with an FPGA integrated chip 11 containing four-way LD / LED emitting light source encoding information and an output encoded signal; the interface circuit 12 is a TTL shared interface circuit, and its four-way input terminal is connected to the FPGA integrated chip 11. Its output terminal is connected to the integrated driving power supply 2, and sends coded signals to the integrated driving power supply 2 to provide the required four kinds of laser light field information for the multi-wavelength infrared semiconductor laser light source.

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a multi-wavelength integrated infrared semiconductor laser light source, which structurally comprises a coding control module 1, an integrated driving power supply 2, an integrated laser emission unit 3, a rotational positioning transmitting objective lens group 4 and a stepped motor driving system 5. The laser light source has the four emission wavelengths of 0.865 mu m, 0.9 mu m, 1.06 mu m and 1.55 mu m and frequency characteristics, and is mainly characterized in that: the high integration of a plurality of infrared wavelength laser light source transmission units is realized by adopting a novel laser diode (LD) / light-emitting diode (LED) machining process, so the configuration of different wavelength infrared semiconductor laser light sources is reduced, a laser transmitter has a smaller volume, a lighter weight and lower cost and is more convenient to operate, and the user requirements of practical work such as comprehensive photoelectric detection, photoelectric equipment acceptance and the like are met. The laser light source has high integration and automation degrees, high transmission efficiency, convenience of online detection, high universality and high cost performance.

Description

technical field [0001] The invention relates to a semiconductor laser light source, in particular to a multi-wavelength integrated infrared semiconductor laser light source. Background technique [0002] Infrared semiconductor laser light source is an important optoelectronic instrument widely used in engineering fields such as laser ranging, laser guidance, optical fiber communication and laser receiving performance testing. Among them, in order to meet the needs of infrared semiconductor laser sources with different performances in the current expanding application fields, lasers with various emission wavelengths and spectral characteristics have gradually become an important research direction for infrared semiconductor laser sources. The most important key technical issue in the development of multi-wavelength laser light sources is integration, that is, how to realize the integration of light-emitting devices, drive modules, optical systems, and optical-mechanical struc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/026H01S5/10H01S5/40
Inventor 陈志斌薛明晰刘羽翔刘宝华侯章亚
Owner ORDNANCE TECH RES INST OF THE GENERAL ARMAMENT DEPT PLA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap