Ion implantation dose detection control apparatus of plasma immersion ion implanter

Abstract

The invention, which belongs to the microelectronic technology field, discloses an ion implantation dose detection control apparatus of a plasma immersion ion implanter. The apparatus comprises: a diagnosis unit, which is used for diagnosing plasma characteristic parameters including an ionic density, an electronic density, a plasma electronic potential and a plasma electronic temperature and the like; an analysis unit, which is used for obtaining particle components in a plasma and particle contents of all the components; a calculating unit, which is used for calculating an implantation technological parameter according to the plasma characteristic parameters as well as the particle components in the plasma and the particle contents of all the components; and a control unit, which is used for controlling an implantation technology of a plasma immersion ion implanter according to an output signal of the calculating unit and the implantation technological parameter. According to the ion implantation dose detection control apparatus of the plasma immersion ion implanter in the invention, a problem on detection of a plurality of charged ions during current ion implantation dose detection is solved; and meanwhile, the apparatus can be applied for accurate control of a process flow of ion implantation.

Description

technical field [0001] The invention relates to an ion implantation dose detection and control device, in particular to an ion implantation dose detection and control device for a plasma immersion implanter. Background technique [0002] In the semiconductor process, the mainstream impurity doping technology adopts the beamline ion implantation technology (Ion Implantation, II). This method is to generate plasma by the ion source, and then extract the required ion components through mass spectrometry analysis. The ions are accelerated to a certain energy and injected into the semiconductor substrate (such as silicon wafer). This method requires complex mass spectrometry and scanning devices, low injection efficiency, complex structure, and extremely high cost. [0003] With the further shrinking of the feature size of integrated circuits, the ion implantation energy needs to be further reduced to below 1000 electron volts (sub-KeV). Negative effect. Therefore, a novel pla...

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Problems solved by technology

However, the Faraday cup detection method still cannot solve the problem of various charged ions, so although this method has improved compared with the bias current method, it is still not feasible to directly use it for the detection and control of implanted ion dose in PIII

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