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Assembly process for IGBT (insulated gate bipolar transistor)

A technology of process flow and station, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of products not reaching the professional level, affecting product quality, irregular assembly actions, etc., and achieve saving in searching for materials and The time of the tool, the convenience of tracing the person in charge of quality, and the effect of improving the level of on-site management

Active Publication Date: 2012-03-21
CHAJNA MAJNING DRAJVS EHND AUTOMEHJSHN KO
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the production method of high-precision devices such as IGBT is to use one person to operate multiple tasks, which is likely to cause irregular assembly actions, and the assembled products cannot reach the professional level, which affects product quality. There is no professional working platform for the existing operations. Due to the radiator and IGBT has very strict requirements on surface flatness, so if there is no professional working platform, the surface of components will be damaged, resulting in the performance of components being affected, and the existing working method does not have proper protection in transportation Measures, such as the weight of the radiator is still quite large, but there is no suitable means of transportation, the workers carry the radiator or IGBT with bare hands, once an accident occurs, the components will be damaged, and the cost of the IGBT is very high, once it is damaged, it cannot be used , will cause considerable economic loss

Method used

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  • Assembly process for IGBT (insulated gate bipolar transistor)
  • Assembly process for IGBT (insulated gate bipolar transistor)
  • Assembly process for IGBT (insulated gate bipolar transistor)

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Embodiment Construction

[0032] In order to deepen the understanding of the present invention, the present invention will be further described below in conjunction with the embodiments and accompanying drawings. The embodiments are only used to explain the present invention and do not constitute a limitation to the protection scope of the present invention.

[0033] Such as Figures 1 to 5 It shows a specific embodiment of an IGBT assembly process flow of the present invention: an IGBT assembly process flow, 6 station points are set during the assembly process, and work stations are respectively set at each corresponding station point. Appliance area, and set up an inspector, including the following process steps:

[0034] (1) Set station 1 and apply insulating silicone grease;

[0035] ① Buckle the IGBT upside down on the special fixed tooling bracket, and pay attention to prevent collision, friction, etc.;

[0036] ② Before applying insulating silicone grease, use a clean cotton cloth or use a ...

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Abstract

The invention discloses an assembly process for an IGBT (insulated gate bipolar transistor). During the assembly process, a plurality of working position points are set, a working position device region is arranged in each corresponding working position point, and several inspectors are assigned. The assembly process for the IGBT comprises the following steps of: (1) setting a working position 1 where insulating silicone grease is coated; (2) setting a working position 2 where the IGBT and a radiator are pre-fastened; (3) setting a working position 3 where the radiator is fastened; (4) setting a working position 4 where heating resistors are assembled in the preset positions; (5) setting a working position 5 where a driving circuit board is fixed; (6) setting a working position 6 where the modular internal wiring of the component formed in the step (5) is completed; and after the above steps are completed in order, delivering the semi-finished products to a storage region. The process improves quality control and increases work efficiency.

Description

technical field [0001] The invention relates to the field of processing high-precision devices such as electronic components, in particular to the field of mass production of IGBTs. Background technique [0002] At present, the production method of high-precision devices such as IGBT is to use one person to operate multiple tasks, which is likely to cause irregular assembly actions, and the assembled products cannot reach the professional level, which affects product quality. There is no professional working platform for the existing operations. Due to the radiator and IGBT has very strict requirements on surface flatness, so if there is no professional working platform, the surface of components will be damaged, resulting in the performance of components being affected, and the existing working method does not have proper protection in transportation Measures, such as the weight of the radiator is still quite large, but there is no suitable means of transportation, the work...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50
Inventor 谭国俊陈家兴郭爱芹
Owner CHAJNA MAJNING DRAJVS EHND AUTOMEHJSHN KO
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