Method for preparing graphene nanoribbon on insulating substrate

Abstract

Provided is a method for preparing graphene nano belts on insulating substrate, which comprises the following steps:1) preparing monoatomic layer steps on the insulating substrate; 2) directly developing graphene nano belts on the insulating substrate having monoatomic layer steps obtained from step 1). Also provided is graphene nano belt obtained from the method. The method utilizes the different nucleation characteristics of graphene on the atom steps and flat cleavage surface. The graphene is grown only alone the edge of the steps so as to form graphene nano belt with adjustable dimension by adjusting conditions, such as temperature, pressure, degree of saturation of activated carbon atom and so on.

Description

technical field

[0001] The invention relates to a method for preparing graphene nanobelts on an insulating substrate, in particular to a method for growing graphene nanobelts by using an insulating substrate with a single atomic layer thickness step as a template. It belongs to the field of low-dimensional materials and new materials. Background technique

[0002] Restricted by physical principles, the processing limit of silicon materials is generally considered to be a line width of 10 nanometers. If it is less than 10 nanometers, it is unlikely to produce products with stable performance and higher integration. Finding alternative materials for silicon as the channel layer of next-generation optoelectronic devices has become an urgent task to continue Moore's Law and obtain higher-performance chips. Since graphene was discovered in 2004, due to its unique properties, including the thinnest, strongest, high thermal conductivity, high hardness, high electron mobility, zero...

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