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Apparatus and method used for preparing graphene, and obtained graphene

A technology of graphene film and furnace tube, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems that cannot meet large-scale production and affect the output of graphene film, and achieve the effect of increasing production

Active Publication Date: 2012-06-13
2D CARBON CHANGZHOU TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The long waiting process for heating / cooling seriously affects the output of graphene film, which cannot meet the needs of mass production

Method used

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  • Apparatus and method used for preparing graphene, and obtained graphene
  • Apparatus and method used for preparing graphene, and obtained graphene
  • Apparatus and method used for preparing graphene, and obtained graphene

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Embodiment Construction

[0023] In the present invention, the term "sample" used refers to the base material sample itself or the base material sample with dragging parts used to support the growth of the graphene film.

[0024] The term "growth gas" or "growth gas source" as used herein refers to the gas used to grow the graphene film.

[0025] The invention provides a device for continuously preparing graphene films, which comprises a furnace tube with openings at both ends, and the openings at both ends are respectively connected with an opening end of a sampling chamber and an opening end of a sampling chamber, wherein A valve and an air inlet interface part are provided at the connection between the furnace tube and the sample chamber, a valve and an air outlet interface part are provided at the connection between the furnace pipe and the sample chamber, and the sample chamber is also equipped with an inlet A gas inlet / outlet interface part and a sample inlet, and the sample outlet chamber is als...

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Abstract

The invention relates to an apparatus used for continuously preparing graphene through a chemical vapor deposition (CVD) method. The apparatus is mainly composed of a sample feeding chamber, a furnace tube, and a sample discharging chamber. A high growing temperature is maintained in a growing zone in a growing chamber. No temperature increasing or reducing procedure is required, and a transmission problem of a sample in a high-temperature zone is solved. Growing can be continuously carried out, such that the yield of graphene prepared with the CVD method is greatly improved.

Description

technical field [0001] The invention relates to a device and method for preparing a graphene film, and the prepared graphene film. More specifically, it relates to a device and method for preparing a graphene film by a continuous chemical vapor deposition method (referred to as CVD method), and the prepared graphene film. Background technique [0002] Graphene has excellent mechanical, thermal, electrical and magnetic properties, and is expected to be widely used in high-performance nanoelectronic devices, composite materials, energy storage and other fields, and has become one of the research hotspots in recent years. [0003] Existing CVD methods for growing graphene films, such as figure 1 As shown: first, the metal foil 1 is preheated at about 1000°C for about 1.5 hours under the protective environment of argon and hydrogen, and then placed in the growth area of ​​the circular quartz glass furnace tube 2, and methane 3 is passed through it. Carbon decomposition is perf...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/54
Inventor 彭鹏金虎
Owner 2D CARBON CHANGZHOU TECH INC
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