Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for detecting surface subfissure of silicon wafers

A technology of silicon wafer surface and detection method, applied in measurement devices, instruments, and mechanical devices, etc., can solve the problems of silicon wafer pollution, inspector fatigue, dry mouth, etc., and achieve the effect of easy implementation and simple method.

Inactive Publication Date: 2015-06-17
KONCA SOLAR CELL
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are two obvious defects in this detection method: blowing air for a long time in the mass production process will easily cause fatigue and dry mouth and tongue discomfort to the inspectors, and blowing air will easily cause pollution to silicon wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] In this embodiment, the method for detecting cracks on the surface of a silicon wafer according to the present invention includes a preparation part and an operation part;

[0012] Preparation part: including choosing an electric heating steam cleaner as the steam generating device, setting a slender steam ejection pipe on it, and setting a button that can be used to adjust the amount of steam, and wrapping several layers at the nozzle of the steam ejection pipe Fine gauze, so that the water droplets with larger particles can be filtered out, and the steam penetrates through the gauze;

[0013] Operation part: control the switch button, the time is about 3 to 6 seconds, and at the same time, the hand-held steam ejection tube moves in parallel above the silicon wafer group to be tested, so that the steam is evenly sprayed on the surface of the silicon wafer. When the steam evaporates rapidly, observe the silicon wafer Surface phenomenon, determine whether there are hidde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for detecting the surface subfissure of silicon wafers. The method comprises a preparation part and an operation part; the preparation part comprises the following steps of: selecting and using a steam generating device, arranging a long and thin steam spraying pipe on the steam generating device, arranging a button which can be used for adjusting steam flow, and wrapping a plurality of layers of fine gauze at a nozzle of the steam spraying pipe, so that water droplets with larger particles can be filtered and steam can penetrate through the gauze; and the operation part comprises the following steps of: controlling a switch button, meanwhile, handholding the steam spraying pipe to parallelly move above the silicon wafers to be detected such that the steam is evenly sprayed on the surfaces of the silicon wafers, observing the surface phenomena of the silicon wafers, overturning the silicon wafers, handholding the steam spraying pipe to parallelly move above the silicon wafers, and observing the surface phenomena of the silicon wafers. The method is based on the characteristics of blowing detection, and the common steam generating device is adopted to replace the air blowing by a mouth for detection, so that the method has the advantages of simple method and easiness for implementation.

Description

technical field [0001] The invention relates to a method for detecting cracks on the surface of a silicon chip. Background technique [0002] In the field of photovoltaics, the hidden cracks of silicon wafers are relatively hidden cracks that cannot be seen under normal conditions. When the adhesive surface is about to be cut through, due to the internal thermal stress of crystalline silicon and the mechanical processing Cracks caused by stress and other reasons, because the cracks do not penetrate, may be located on either side of the silicon wafer, automatic detection equipment cannot be detected, the traditional detection method is to blow air on the surface of the silicon wafer, and the steam quickly covers And during the fast drying process, cracks appear and disappear quickly. There are two obvious defects in this testing method: blowing air for a long time in the mass production process will easily cause fatigue and dry mouth and tongue discomfort to the inspectors, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N19/08
Inventor 俞振明高瑶王欣杨乐
Owner KONCA SOLAR CELL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products