Method for realizing pulse check through digital circuit

Abstract

The invention relates to a method for realizing pulse check through a digital circuit, which belongs to the technical field of IGBT (insulated gate bipolar transistor) applications of power electronics. The technical scheme comprises the following steps of: (1) performing frequency division on a pulse signal returned by an IGBT via a D trigger, then comparing the pulse signal with an original pulse, enabling the signal after comparison and a power supply fault signal SO emitted by the IGBT to pass through an or gate and then outputting a series of 220ns short pulses; (2) removing the part from a rising edge to about 220-250nm from the series of the pulses to remove a time delay signal generated by pulse comparison, and performing broadening treatment on the remaining signal, wherein the broadening width is decided by the number of external CLK (clocks) and triggers; and (3) finally outputting a low-level zero signal if an FO (fiber optic) alarm or an SO alarm does not exist; and outputting the pulse signal decided by the number of CLK signals and the triggers if an FO or SO signal exists. According to the method disclosed by the invention, logic conversion and digital pulse signalprocessing are realized in a hardware circuit way, the reliability is high, the anti-interference ability is strong, the original protection function is reinforced and extended, and the protection ofthe IGBT can be better realized.

Description

technical field [0001] The invention relates to a method for realizing pulse verification through a digital circuit, relates to the processing and transmission of protection signals, error signals and pulse signals in the driving and triggering process of a power device IGBT, and belongs to the technical field of power electronic IGBT applications. Background technique [0002] With the rapid development of power electronics technology, IGBT (Insulated Gate Bipolar Transistor) is a new type of power electronic device that came out in the mid-1980s. It combines the fast response of MOSFET, high input impedance and low on-state of GTR. Many excellent characteristics such as voltage drop and high current density have been developed rapidly, and they can replace almost all other types of power devices so far. The existing mature high-voltage grade IGBT has reached 4000V, and the high-frequency IGBT has reached 150K hard switching and other high performance. The application rang...

AI Technical Summary

Problems solved by technology

In the background technology, some manufacturers have introduced corresponding IGBT drive circuits and drive boards, but only provide matching and transmission of trigger and protection signals for IGBTs, and cannot achieve corresponding protection functions in a targeted manner.

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