Manufacturing method for planar bidirectional trigger diode chip
A technology of two-way triggering and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of complex process, high cost, unacceptable market, etc., and achieve the effect of reducing fragmentation rate and high rebound voltage
Inactive Publication Date: 2013-12-25
佛山益辰电子科技有限公司
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The process is extremely complicated, the cost is extremely high, and the market cannot accept it
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[0028] The invention is like Figure 1-11 Shown: the P-type wafer 1 with a thickness of 100-300 μm is used as a raw material to grow an oxide layer 2, a photolithography diffusion window 3, and a process of cutting the wafer 1 into chips 9 on the surface of the wafer 1. In the photolithography diffusion window 3 and The processes of dicing the wafer 1 into chips 9 include the following processes:
[0029] The foregoing steps of growing the oxide layer are as figure 2 Shown: A cleaned P-type wafer 1 is grown at 1050°C with an oxide layer 2 as a diffusion mask;
[0030] The aforementioned lithographic diffusion window process is as follows image 3 As shown, a photolithography process is used to remove part of the oxide layer 2 on the surface of the wafer 1 to leave a diffusion window 3.
[0031] 1) The diffusion window sinks; such as Figure 4 After cleaning, inject mixed acid into the diffusion window 3 to etch the surface of the wafer in the diffusion window 3 (that is, the diffus...
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The invention relates to a manufacturing method for a planar bidirectional trigger diode chip. Low leakage current, high breakback voltage and stable quality are ensured, process steps are further reduced, and a qualified rate is increased. A P-type wafer with the thickness of 100 to 300 mu m is taken as a raw material. The method comprises the steps of growing an oxide layer on the surface of the wafer, photoetching a diffusion window and cutting the wafer into chips. Between the steps of photoetching the diffusion window and cutting the wafer into the chips, the method further comprises the following steps of: 1) sinking the diffusion window; 2) performing phosphorus diffusion; 3) removing an inversion layer from the surface; 4) migrating impurities at high temperature, and growing a silicon dioxide passive film layer; 5) photoetching metal electrode windows; and 6) plating gold or nickel. By the method, a thick silicon wafer can be adopted, so that a fragmentation rate can be decreased; and by a planar passivated structure, cutting is performed in scribing channels, and voltage stability and high high-temperature characteristics are ensured.
Description
Technical field [0001] The invention relates to the technical field of manufacturing discrete semiconductor devices, in particular to a manufacturing method of a planar bidirectional trigger diode. Background technique [0002] At present, two-way trigger diode production technology includes two types: one is OJ (Open Juction) type, which has the advantages of simple process and low cost, but at the same time there are problems of poor high temperature characteristics and easy degradation of rebound voltage, and the quality always exists. The problem is that the market share is getting smaller and smaller; one type is flat, the current process is complicated, the fragmentation rate is high, and the cost is relatively high. Because to achieve the high rebound voltage requirements of the device, a thin base area must be ensured, and a higher doping concentration difference between the emitter area and the base area is required. The current process is complicated to perform more tha...
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IPC IPC(8): H01L21/329
Inventor 薛列龙
Owner 佛山益辰电子科技有限公司