45results about How to "Good high temperature characteristics" patented technology

The invention discloses a high-conductivity non-heat-treatment type moderate-intensity aluminum alloy wire and a production method of the high-conductivity non-heat-treatment type moderate-intensity aluminum alloy wire. The high-conductivity non-heat-treatment type moderate-intensity aluminum alloy wire is produced by finely selecting ingredients and contents of aluminum alloy and conducting process control. The specific steps are as follows: selecting Fe, Si, Mg, Cu and Re with different weight percents, melting aluminum ingot with the content not more than 0.03% in a vertical melting furnace, adding alloying elements in a heat insulation furnace, stirring, refining, conducting on-the-spot contents rapid analysis, carrying out content adjustment, and standing, enabling the aluminum ingot and the alloying element into a continuous casting machine for casting, rolling to be a circular aluminum alloy rod on a continuous rolling machine, pulling the circular aluminum alloy rod to be a circular aluminum alloy wire and twisting the circular aluminum alloy wire to be a conductor for aerial power transmission and distribution. According to the application of the aluminum alloy wire and the production method of the aluminum alloy wire, the aluminum alloy wire directly replaces the generally used aluminum conductor steel reinforced and is an energy-saving, environment-friendly and novel wire.

The invention relates to a mud drying system and a use method thereof. The mud drying system comprises a transcritical heat pump auxiliary heat supplying loop, a heat pump auxiliary heat supplying loop, an air heating and waste heat recovering loop and a hot water circulation loop; the transcritical heat pump auxiliary heat supplying loop comprises an evaporator, an internal heat exchanger, a compressor, a gas cooler and a throttle valve; the heat pump auxiliary heat supplying loop comprises an evaporator, a wastewater and waste heat recovering evaporator, an internal heat exchanger, a compressor, a condenser, a throttle valve, two stop valves and a wastewater tank; the air heating and waste heat recovering loop comprises a hothouse, an air compressor, a gas discharging and carrying port, a first evaporator, the other evaporator and a condenser; and the hot water circulation loop comprises a pump, a hothouse and the condenser in the heat pump auxiliary heat supplying loop. The invention adopts the hothouses to obtain solar energy to heat mud and utilizes the transcritical heat pump auxiliary heat supplying loop and the heat pump auxiliary heat supplying loop to recover the sensible heat and the latent heat in humid air to heat mud, thereby lowering the energy consumption for drying the mud. The invention can be widely applied to various mud processing fields.

The present invention relates to method of preparing mineral bonding material and its composite materials with phosphate and aluminum-silicon material at relatively low temperature. Under relatively low temperature, aluminum-silicon material with reaction activity is made to produce bonding reaction with phosphate to obtain one kind of amorphous solid Al-Si-P mineral bonding material. The Al-Si-P mineral bonding material may be used as basic material to prepare various composite materials with different performance via adding bauxite, silicon powder, flyash, mineral slag, fiber, etc. The said composite materials may be formed through casting or pressing, and the materials have excellent endurance, high mechanical strength and good high temperature performance.

The invention relates to pipeline coating comprising an asphalt composition. The pipeline coating comprises, by weight, 30-80% of asphalt, 10-30% of butadiene styrene rubber, 1-20% of glass flakes and 5-40% of epoxy resin. The invention further provides a pipeline coated with the pipeline coating, a method using the pipeline coating to coat the pipeline and application of the pipeline coating comprising the asphalt composition. The pipeline coating is simple in manufacture method, has excellent impact resistance and flexibility and further displays excellent high-temperature property and adhesive force.

The present invention relates to one kind of mineral bonding material prepared with phosphoric acid and alumina and silica material at relatively low temperature and its composite material. At relatively low temperature, alumina and silica material with reaction activity and phosphoric acid produce bonding reaction to form one kind of amorphous solid mineral bonding Al-Si-P material. The mineral bonding Al-Si-P material may be used as base material and added with bauxite, silica powder, flyash, mineral slag, fiber, etc to prepare various kinds of composite material with different performances. The composite materials may be cast or pressed to form optionally without needing of introducing alkali earth ions, and the prepared material has high durability, high mechanical strength and good high temperature performance.

The invention provides a high-speed DFB laser, and the epitaxial structure thereof comprises an InP substrate. A buffer layer is deposited on the InP substrate. A vertical confinement layer is deposited on the upper left of the buffer layer. A grating layer, a transition layer, a lower confinement layer in an active area, a lower waveguide layer, a quantum well, an upper waveguide layer and an upper confinement layer in the active area are deposited on the upper right of the buffer layer in order from bottom to top. The vertical confinement layer is aligned with the upper end of the upper confinement layer in the active area, and a corrosion barrier layer is deposited above the two layers. A coupling layer, a first barrier gradation layer, a first barrier gradation layer and an ohmic contact layer are sequentially deposited on the corrosion barrier layer. According to the invention, the laser has the advantages of low resistance, fast modulation rate and good lattice matching at high temperature, and is favorable for grating preservation; and during the growth process, pulsed airflow growth is used to grow a microscler nucleus layer first and then an epitaxial layer with a certainthickness, which is beneficial to improve the growth quality of the epitaxial layer.

The invention provides a high-speed working temperature DFB laser. The epitaxial structure of the laser comprises an InP substrate. A buffer layer is deposited on the InP substrate. A vertical confinement layer is deposited on the upper left of the buffer layer. A grating layer, a transition layer, a lower confinement layer in an active area, a lower waveguide layer, a quantum well, an upper waveguide layer and an upper confinement layer in the active area are deposited on the upper right of the buffer layer in order from top to bottom. The vertical confinement layer is aligned with the upperend of the upper confinement layer in the active area, and a corrosion barrier layer is deposited above the two layers. A coupling layer, a first barrier gradation layer, a first barrier gradation layer and an ohmic contact layer are sequentially deposited on the corrosion barrier layer. An insulating layer is arranged on the surface of the laser. According to the invention, the laser has the advantages of low resistance, fast modulation rate and good high temperature characteristics; an Al-containing material is prevented from being exposed to a water and oxygen environment; the reliability of the device is improved; a large-sized chip structure is adopted; a high-thermal-conductivity material is evaporated on the surface of the chip; and the laser has the advantages of good chip heat dissipation and good high temperature characteristic, and can work in a wide temperature range.

A susceptor used for semiconductor epitaxial growth, by which a plurality of highly uniform epitaxially grown films can be obtained at the same time. The susceptor is used for semiconductor epitaxial growth, and is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the external side, and a member, which has the barrel-type susceptor inside and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction. Alternatively, the susceptor is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the inner side, and a member, which has the barrel-type susceptor on the outer circumference part and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction.

The invention discloses a medium-high-frequency transformer capable of being used in a high-temperature downhole environment and a parameter acquisition method therefor The medium-high-frequency transformer comprises magnetic core units, primary side windings, secondary side windings and a fixed frame, wherein the magnetic cores consist of multiple annular nanocrystalline magnetic cores with high high-temperature characteristics; the windings are uniformly wound around each annular magnetic core; the primary side windings are arranged on the inner layer while the secondary side windings are arranged on the outer layer; the numbers of turns of the primary side windings and the secondary side windings on each annular magnetic core are the same; the primary side windings and the secondary side windings on adjacent two magnetic cores are connected in series; all the magnetic cores and the windings are coaxially and longitudinally arranged, and are fixed on the fixed frame; a certain distance is reserved between adjacent two magnetic cores for radiating; the whole transformer is encapsulated by high-temperature epoxy resin; and the primary side windings are led out through primary side terminals while the secondary side windings are led out through secondary side terminals. The transformer is flexible in size, and can be used reliably in the high-temperature downhole environment.

The invention discloses a photon microflow detection chip based on LTCC integration, and belongs to the field of microsystem sensing detection. The chip integrates a micro light source, an optical fiber system, a photon sensing system, a detector chip, a signal processing chip and a temperature control board on an LTCC monolithic substrate, wherein a microflow channel and the optical fiber system are manufactured in the substrate, and therefore sensing of photons in the monolithic microflow system is achieved. The photon microflow detection chip has the advantages that integrated manufacturing of the optical fiber system and the photon sensing system can be more conveniently achieved in the LTCC substrate; parts such as the light source, the detector and the signal processor which are needed by the detection chip can be integrated on the LTCC substrate through a standard microassembly technology; controllable manufacturing of the microflow detection channel needed by the detection chip on the LTCC substrate can be conveniently achieved; LTCC has the good anti-corrosion characteristic and the high-temperature characteristic and can support the chip to be applied to a severe environment.

The invention relates to a pipeline coating containing an asphalt composition. The coating is prepared from the following components in percentage by weight: 40 to 70 percent of asphalt, 10 to 30 percent of styrene-butadiene rubber, 1 to 20 percent of glass flake and 5 to 40 percent of epoxy resin. The invention also provides a pipeline coated with the pipeline coating, a method for coating the pipeline by using the pipeline coating and a purpose of the asphalt composition as the pipeline coating. The production method of the pipeline coating provided by the invention is simple; the pipeline coating not only has excellent impact resistance and flexibility, but also shows excellent high-temperature characteristic and adhesive force.

The invention relates to a manufacturing method for a planar bidirectional trigger diode chip. Low leakage current, high breakback voltage and stable quality are ensured, process steps are further reduced, and a qualified rate is increased. A P-type wafer with the thickness of 100 to 300 mu m is taken as a raw material. The method comprises the steps of growing an oxide layer on the surface of the wafer, photoetching a diffusion window and cutting the wafer into chips. Between the steps of photoetching the diffusion window and cutting the wafer into the chips, the method further comprises the following steps of: 1) sinking the diffusion window; 2) performing phosphorus diffusion; 3) removing an inversion layer from the surface; 4) migrating impurities at high temperature, and growing a silicon dioxide passive film layer; 5) photoetching metal electrode windows; and 6) plating gold or nickel. By the method, a thick silicon wafer can be adopted, so that a fragmentation rate can be decreased; and by a planar passivated structure, cutting is performed in scribing channels, and voltage stability and high high-temperature characteristics are ensured.

The invention relates to the technical field of alloys, and particularly relates to a gold alloy. The gold alloy comprises 5-10% of Ag, 3-7% of Zn, 2-5% of Cu, 2-4% of Nb, 0.5-1.5% of Ca, 0.5-1.5% of Zr, 2-4.5% of Er, 0.5-1% of Ho, 1-3% of epoxy resin and the balance of gold and inevitable impurities. The invention also provides a synthetic method of the gold alloy. The gold alloy provided by the invention has the advantages of excellent high-temperature property, very long service life, high-temperature resistance, oxidization resistance and creep resistance; gold jewelry made from the gold alloy has the advantages of low price, high hardness and long-lasting color and luster and can be worn for a long time.

The invention discloses a preparation method of a three-phase ceramic fiber composite heat insulation tile, belongs to the technical field of high-temperature ceramic materials, and aims at solving the problems that the heat-resistant temperature of an existing ceramic fiber heat insulation tile needs to be increased and the high-temperature volume stability is poor. The preparation method comprises the following steps of: 1, adding boron oxide powder and zirconium oxide powder into silica sol, adding quartz ceramic fibers into the mixed sol, and drying to obtain pretreated quartz ceramic fibers; 2, mixing an opacifying agent, an adhesive composition and a sintering aid, and adding an ethanol solution to obtain mixed slurry; 3, uniformly mixing the pretreated quartz ceramic fibers, siliconcarbide ceramic fibers, alumina fibers and a polyacrylamide aqueous solution to obtain a ceramic fiber mixture; 4, mixing the mixed slurry with the ceramic fiber mixture; 5, pressing to form a ceramic fiber composite dry blank; and 6, carrying out sintering treatment. The quartz ceramic fibers are pretreated, crystallization of the quartz ceramic fibers is inhibited, and the heat insulation performance and the high-temperature stability of the composite heat insulation tile are improved.

The invention relates to a guide self-locking bolt connecting assembly for a blind hole. The guide self-locking bolt connecting assembly for the blind hole comprises a self-locking bolt composed of a head and a threaded rod, wherein at least one angle groove extending in the axial direction is formed in the outer wall of the threaded rod; two parallel guide pins are arranged in each angle groove. Each guide pin comprises a flat and straight cylindrical guide pin body, wherein a plurality of annular threaded grooves are formed in the outer wall of the guide pin body, the distance between every two adjacent annular threaded grooves is equal to the thread pitch of the thread on the threaded rod, installation end sockets are arranged at the two ends of the guide pin body, and the depth of the angle grooves is larger than or equal to the diameter of the guide pin body. On the threaded rod, annular groove holes are formed in the two ends of each angle groove, and the installation end sockets at the two ends of each guide pin body are located in the annular groove holes in the two ends respectively. The invention further relates to a use method for the guide self-locking bolt connecting assembly for the blind hole.

The invention provides a high-reliability rectification device application chip with a composite inner passivation film single-groove structure. A chip mesa adopts a single-groove design, the surfaceof the inner wall of a groove adopts a composite inner passivation layer structure, and a composite inner passivation layer is composed of a polycrystalline silicon film, a bottom layer high-purity nanoscale oxide film, a silicon nitride film and glass. The chip is composed of a single crystal semiconductor body on the middle layer, a chip body with a P-type boron junction region on the upper layer and an N-type phosphorus junction region on the lower layer, a table board, an upper electrode metal layer and a lower electrode metal layer. According to the invention, the problems of poor reliability and poor high-temperature characteristics of a protective film with glass as a passivation layer in a chip groove are solved.

The invention provides a diode chip and a manufacturing method thereof. The chip comprises a plurality of cells which are connected in parallel, each cell comprises an N+ substrate, the back surface of each N+ substrate is provided with a back metal layer, the front surface of each N+ substrate is provided with an N- epitaxial region, and the front surface of each N- epitaxial region is sequentially provided with a gate oxide layer, polycrystalline silicon and a metallization layer; a P-type base region is embedded in the middle of the front face of the N- epitaxial region, a protruding part is arranged on the back face of the metallization layer, the protruding part is embedded into the P-type base region, an N+ region is arranged around the protruding part, a P+ region is arranged between the end face of the protruding part and the P-type base region, and the front faces of the P-type base region and the N+ region are covered with gate oxide layers. Compared with a PN junction structure, the device has the advantages of lower break-over voltage, shorter reverse recovery time and the like; compared with a Schottky diode, the Schottky diode has the advantages of good high-temperature characteristic, small electric leakage, positive temperature coefficient and the like; the conduction pressure drop is small, the energy consumption is low, the heat yield is small, and the durability is high; and a multi-cell parallel structure is adopted, so that the heat dissipation capability is greatly improved.

The invention relates to a magnetic alloy material, which is the basic material of FeCOMSiBTi, wherein each constituted component comprises by atom percent (at %): 20 to 25 percent of cobalt, 3 to 5 percent of M, 8 to 12 percent of silicon, 10 to 15 percent of boron, 1 to 3 percent of titanium, 1 to 3 percent of aluminum and 1 to 3 percent of tellurium, and the rest percent is iron and few amount of inevitable impurities; and the combination is M copper and one or more of niobium, molybdenum, vanadium and zirconium.