Susceptor

Abstract

A susceptor used for semiconductor epitaxial growth, by which a plurality of highly uniform epitaxially grown films can be obtained at the same time. The susceptor is used for semiconductor epitaxial growth, and is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the external side, and a member, which has the barrel-type susceptor inside and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction. Alternatively, the susceptor is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the inner side, and a member, which has the barrel-type susceptor on the outer circumference part and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction.

Description

technical field [0001] The present invention relates to a kind of susceptor used when epitaxially growing compound semiconductors such as silicon carbide, gallium nitride, aluminum nitride, etc. Susceptor for epitaxial film). Background technique [0002] Conventionally, in the semiconductor manufacturing process, a single crystal manufacturing method is used, that is, a chemical vapor phase growth method (CVD method) is used to cause a gas phase reaction of raw material gases on a wafer to grow an epitaxial layer. Specifically, the CVD method refers to placing a single wafer on a susceptor, heating the susceptor and the wafer to an epitaxial growth temperature, and maintaining the temperature. Then, a mixed gas of a carrier gas and a source gas is introduced into the reaction furnace, and the source gas decomposed by the high temperature is accumulated on the wafer to form an epitaxial layer. As a reaction furnace for forming a thick epitaxial layer at high speed, a verti...

AI Technical Summary

Problems solved by technology

[0005] However, in the conventional apparatus, there is a large difference in the distance between the plurality of substrates on the susceptor and the wall facing these substrates, so temperature differences tend to occur among the substrates.

Therefore, there is a difference in the growth rate of the epitaxial film between the substrates, so that the thickness of the epitaxial film is different, and it is difficult to obtain multiple epitaxial films with the same quality at the same time.

Images