High-speed working temperature DFB laser and manufacturing method thereof

A technology of DFB lasers and lasers, which is applied in the direction of lasers, semiconductor lasers, phonon exciters, etc., can solve the problems of DFB laser high-temperature modulation rate reduction, etc., and achieve fast modulation rate, improved reliability, and good high-temperature characteristics.

Pending Publication Date: 2019-12-03
全磊光电股份有限公司
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AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the high-temperature modulation rate of DFB lasers drops seriously, we designed a high-speed operating temperature DFB laser to improve the heat dissipation on the chip surface and increase the high-temperature bandwidth, so that the laser can work in the temperature range of -40 to 85°C

Method used

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  • High-speed working temperature DFB laser and manufacturing method thereof
  • High-speed working temperature DFB laser and manufacturing method thereof
  • High-speed working temperature DFB laser and manufacturing method thereof

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preparation example Construction

[0031] A preparation method for a high-speed DFB laser, comprising the steps of:

[0032] Step 1: Using InP as the growth substrate, the buffer layer 02 and the grating layer are sequentially grown on the InP substrate 01 to obtain the first epitaxial structure, such as figure 2 Then take out the epitaxial wafer, spin-coat photoresist, use holographic lithography or electron beam lithography to form a grating pattern, and then use optical lithography to define the first waveguide region, and use chemical wet etching method to form a partial raster; as in image 3 shown.

[0033] Step 2: Carry out the second epitaxial growth on the basis of step 1; first, in the pH 3 Under the protection of gas, slowly raise the temperature to 550°C, and then feed TMIn in pulses as the source gas to grow InP. When the thickness of the InP layer 050 completely covers the grating, raise the temperature to the normal epitaxial growth temperature of 670°C, increase the flow rate of TMIn, from R...

Embodiment 1

[0043] With a conductivity of 2-8x10 18 cm -2 The InP is used as the growth substrate and put into the MOCVD system of Aixtron Company for growth. The reaction chamber pressure was 50mbar, the growth temperature was 670°C, and the 2 As carrier gas, trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAl), diethylzinc (DeZn), silane (SiH 4 ), arsine (AsH 3 ) and phosphine (PH 3 ) and the like are reaction source gases, and sequentially grow an N-InP buffer layer, an N-InGaAsP grating layer, and an N-InP transition layer. Among them, the thickness of the grating layer is 50nm. It is worth noting that the grating layer N-InGaAsP is a tensile strain, and the strain is 500-1000ppm.

[0044] Then the grown epitaxial wafer is taken out, and a grating is formed by holographic lithography or electron beam lithography. The grating period is 203nm and the depth is 70nm. At the same time, the wave layer region B is formed by optical lithography, and the width of the...

Embodiment 2

[0057] The epitaxial wafer preparation process is the same as that of Embodiment 1.

[0058] After the growth of the epitaxial wafer is completed, the ridge waveguide structure is formed by photolithography and etching process, and then the front electrode is evaporated on the ridge waveguide structure, and then part of the area is exposed by photolithography, and the diamond high thermal conductivity layer is formed by PECVD. The thermal conductivity of diamond is greater than 20W / (m·K), and it is the semiconductor material with the highest thermal conductivity known so far, and it has high hardness and stable chemical properties. It is worth noting that the diamond material cannot cover the ridge to avoid damage to the ridge caused by inconsistent stress at high temperature. Then the InP substrate is thinned, and the back electrode is evaporated on the back of the thinned InP substrate; a high reflective film (90% reflectivity) is evaporated on one end of the tube core, and ...

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Abstract

The invention provides a high-speed working temperature DFB laser. The epitaxial structure of the laser comprises an InP substrate. A buffer layer is deposited on the InP substrate. A vertical confinement layer is deposited on the upper left of the buffer layer. A grating layer, a transition layer, a lower confinement layer in an active area, a lower waveguide layer, a quantum well, an upper waveguide layer and an upper confinement layer in the active area are deposited on the upper right of the buffer layer in order from top to bottom. The vertical confinement layer is aligned with the upperend of the upper confinement layer in the active area, and a corrosion barrier layer is deposited above the two layers. A coupling layer, a first barrier gradation layer, a first barrier gradation layer and an ohmic contact layer are sequentially deposited on the corrosion barrier layer. An insulating layer is arranged on the surface of the laser. According to the invention, the laser has the advantages of low resistance, fast modulation rate and good high temperature characteristics; an Al-containing material is prevented from being exposed to a water and oxygen environment; the reliability of the device is improved; a large-sized chip structure is adopted; a high-thermal-conductivity material is evaporated on the surface of the chip; and the laser has the advantages of good chip heat dissipation and good high temperature characteristic, and can work in a wide temperature range.

Description

technical field [0001] The invention belongs to the technical field of DFB laser development, and in particular relates to a high-speed working temperature DFB laser and a manufacturing method thereof. Background technique [0002] As the 5G commercialization is approaching, the dynamic single-mode distributed feedback laser (DFB-LD) with narrow linewidth, high side mode suppression ratio and high modulation rate has become the preferred light source. DFB adopts grating modulation with periodically changing refractive index, has good single longitudinal mode characteristics, side mode suppression ratio can reach more than 35dB, and modulation rate can reach more than 50GHz, which can meet the application requirements of high speed / low delay of 5G mobile network. Since the 5G network is used outdoors, it is required to achieve a high modulation rate at -40 to 85°C. However, at high temperatures, the carrier leakage of the laser is serious, and the excessive hot phonons are ea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/22H01S5/34
CPCH01S5/12H01S5/22H01S5/3403H01S2304/00
Inventor 单智发张永姜伟陈阳华
Owner 全磊光电股份有限公司
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