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Device and method for detecting ion beam stability

A detection device and detection method technology, which can be used in semiconductor/solid-state device testing/measurement, discharge tubes, electrical components, etc., and can solve problems such as judging the stability of ion beams

Active Publication Date: 2016-01-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the actual production process, the multiple current detection values ​​of the detected ion beam will change compared with the last detection value, so it is difficult to judge the stability of the ion beam according to the change of multiple current values

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  • Device and method for detecting ion beam stability
  • Device and method for detecting ion beam stability
  • Device and method for detecting ion beam stability

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Embodiment Construction

[0048]Existing ion implantation equipment detects the current value of the ion beam through multiple detection sensors on the ion beam detection arm, and obtains multiple current detection values ​​reflecting the stability of the ion beam. Under normal circumstances, the center of the ion beam detection arm The current detection value detected by the position corresponds to the current value at the center of the ion beam, the current detection value at the center of the ion beam is the largest, the current detection value on both sides of the ion beam gradually decreases, and the multiple current detection values ​​are normally distributed. In the actual production process, it is found that the detected multiple current detection values ​​will change, for example: the current value of the ion beam detected by the detection sensor at the same position will be different from the current value detected last time, or the detection value of the middle position will be different. The...

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Abstract

The invention relates to a detection apparatus for stability of an ion beam and a detection method thereof. The detection method comprises the following steps that: a wafer is provided; a plurality of current detection values of an ion beam are obtained before or after implantation into the wafer as well as weight values corresponding to the current detection values are calculated; a mean value and a variance of the weight values are calculated; a first deviation value corresponding to the mean value and the variance and a second deviation value corresponding to the mean value and the variance are obtained, wherein the first deviation value is less than a second deviation value; and if an absolute value of a difference between the mean value and the variance and a corresponding standard value is greater than and is equal to the corresponding first deviation value or an absolute value of a difference between the mean value or the variance and a corresponding standard value is greater than and is equal to the corresponding second deviation value, the ion beam is in a unstable state. According to the embodiment of the invention, the method enables stability of an ion implantation technology to be accurately detected.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a detection device and a detection method for ion beam stability of ion implantation equipment. Background technique [0002] Ion implantation is a technique for selectively implanting impurity materials into semiconductor materials in semiconductor technology. The impurity material is ionized in the ionization chamber, and these ions are accelerated to form an ion beam with a set energy, which bombards the surface of the wafer and enters an energy-dependent depth in the wafer. [0003] Ion implanters typically convert gaseous or solid impurity material in an ionization chamber into an ion beam that can be mass analyzed to eliminate unwanted ion species, accelerated to a desired energy, and directed onto the wafer surface . The ion beam may be a spot beam or a ribbon beam. [0004] Implanting a desired dose of impurities into a wafer is critical to ensuring the stabi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01J37/317
Inventor 方亮贾敏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP