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CIGS solar cell device and manufacturing method thereof

A technology for solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve the problems of reduced battery cost, inability to completely avoid the absorption loss of a window layer film, cumbersome battery preparation process, and the like, and achieve the effect of simplifying the process

Active Publication Date: 2014-05-21
THE CHINESE UNIVERSITY OF HONG KONG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although researchers have improved the thin film process, reduced the concentration of Al and performed H doping treatment, or performed textured treatment on the window layer to form a light-trapping structure, these methods cannot completely avoid the absorption of the window layer film in the near-infrared band. loss, and make the battery preparation process more cumbersome, which is not conducive to the reduction of the cost of CIGS thin film batteries

Method used

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  • CIGS solar cell device and manufacturing method thereof
  • CIGS solar cell device and manufacturing method thereof
  • CIGS solar cell device and manufacturing method thereof

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preparation example Construction

[0030] A method for preparing a copper indium gallium selenide solar cell device in one embodiment, such as figure 2 shown, including the following steps:

[0031] Step S1: preparing a back electrode layer, a copper indium gallium selenide light absorption layer, a buffer layer and a barrier layer stacked in sequence on the substrate.

[0032]The substrate can be glass, stainless steel or polymer flexible substrate, etc. The back electrode layer is preferably a molybdenum metal layer. The buffer layer is preferably a CdS layer. The barrier layer is preferably an i-ZnO high resistance layer.

[0033] Use but not limited to magnetron sputtering molybdenum metal target to deposit molybdenum back electrode layer; use but not limited to magnetron sputtering selenization or four-source co-evaporation process to prepare CIGS light absorbing layer, the thickness of the deposited absorbing layer is about 2 μm ; Use but not limited to chemical water bath method to deposit CdS or ot...

Embodiment 1

[0051] 1. Soda-lime glass is used as the substrate, and the substrate thickness is 2mm; the molybdenum metal back electrode layer is deposited by sputtering the molybdenum metal target with the DC magnetron sputtering process, and the thickness is about 1 μm; the CIGS light absorption layer is deposited by the three-step co-evaporation method layer, the thickness is 2μm; the CdS buffer layer is deposited by chemical water bath method, the thickness is about 50nm; the i-ZnO high resistance layer is deposited by sputtering ZnO ceramic target by radio frequency magnetron sputtering process, and the power density is 0.5W / cm 2 , the sputtering time is 15min, the gas flow ratio Ar:O 2 =10:1, the thickness is about 50nm; thus the Mo / CIGS / CdS / i-ZnO structure is obtained.

[0052] 2. Preparation of single-layer graphene by chemical vapor deposition. Put the cleaned Cu sheet into the CVD furnace, turn on the mechanical pump, and pump air until the background vacuum is 3mTorr. Adjust t...

Embodiment 2

[0056] 1. With stainless steel as the substrate, the thickness of the substrate is 0.05mm; the molybdenum metal back electrode layer is deposited by sputtering the molybdenum metal target with the DC magnetron sputtering process, and the thickness is about 1 μm; the CIGS light absorbing layer is deposited by the three-step co-evaporation method , the thickness is 2μm; the CdS buffer layer is deposited by chemical water bath method, the thickness is about 50nm; the i-ZnO high resistance layer is deposited by sputtering ZnO ceramic target by radio frequency magnetron sputtering process, and the power density is 0.5W / cm 2 , the sputtering time is 15min, the gas flow ratio Ar:O 2 =10:1, the thickness is about 50nm; thus the Mo / CIGS / CdS / i-ZnO structure is obtained.

[0057] 2. Preparation of single-layer graphene by chemical vapor deposition. Put the cleaned Cu sheet into a CVD furnace, turn on the mechanical pump, and pump air until the background vacuum is 6mTorr. Adjust the fl...

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Abstract

The invention relates to a CIGS solar cell device. The device comprises: a substrate, a back electrode layer, a CIGS light absorption layer, a buffer layer, a barrier layer and a conductive window layer, wherein the substrate, the back electrode layer, the CIGS light absorption layer, the buffer layer, the barrier layer and the conductive window layer are stacked successively; the conductive window layer is a n-type graphene film. Though using the graphene film as the conductive window layer of the CIGS solar cell device, the graphene film possesses a lower square resistance than a traditional conductive window layer ZnO:Al film does and loss of a near infrared optical band caused by the ZnO:Al film can be avoided. A utilization rate of the cell to light can be increased and cell performance can be improved. In addition, the invention also relates to a method for manufacturing the CIGS solar cell device.

Description

【Technical field】 [0001] The invention relates to the field of solar cells, in particular to a copper indium gallium selenium solar cell device and a preparation method thereof. 【Background technique】 [0002] Copper indium gallium selenide (CIGS) thin-film photovoltaic cells have the advantages of low cost, high efficiency, and good stability, and are recognized as the second-generation solar cells with the most development and market potential. People's research on it began in the early 1980s. After more than 30 years of development, the theoretical research and preparation process of CIGS thin film solar cells have achieved gratifying results. The highest laboratory photoelectric conversion efficiency of CIGS thin-film solar cells reaches 20.3%, which is currently the thin-film photovoltaic cell with the highest conversion efficiency. [0003] Traditional CIGS thin-film photovoltaic cells generally use ZnO:Al transparent electrode as the window layer, because ZnO:Al thin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/18C23C28/00
CPCY02P70/50
Inventor 尹苓肖旭东张康
Owner THE CHINESE UNIVERSITY OF HONG KONG