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Saturable absorption mirror of wide band graphene

A saturable absorption and graphene technology, applied in the field of lasers, can solve the problems of limited frequency bandwidth of graphene saturable absorption mirror, limit graphene ultra-broadband characteristics, and cannot fully utilize graphene ultra-broadband saturable absorption, etc., to achieve Stable and continuous mold locking, simple production and low cost

Inactive Publication Date: 2012-07-04
SHANGHAI JIAOTONG UNIV
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  • Abstract
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Problems solved by technology

At present, the commonly used method is to transfer the graphene layer to a reflective dielectric film lens or to a transmissive optical lens. The former limits the ultra-broadband saturable absorption characteristics of graphene due to the limited bandwidth of the dielectric reflective film, and the latter due to the transmission The F-P effect of the type mirror in the laser cavity limits the transmission bandwidth and also limits the ultra-broadband characteristics of graphene, so the frequency bandwidth of the actual graphene saturable absorption mirror is limited, and the advantages of graphene ultra-broadband saturable absorption cannot be fully utilized.

Method used

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  • Saturable absorption mirror of wide band graphene
  • Saturable absorption mirror of wide band graphene
  • Saturable absorption mirror of wide band graphene

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Embodiment Construction

[0017] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0018] Please see first figure 1 , figure 1 It is a structural schematic diagram of a broadband graphene saturable absorbing mirror of the present invention. As shown in the figure, a broadband graphene saturable absorbing mirror 9 is composed of an optical substrate 1, a gold-plated reflective film 2, and a graphene layer 3 on the gold-plated reflective film 2 from bottom to top.

[0019] The optical substrate 1 is made of glass, quartz, calcium fluoride, zinc selenide or silicon carbide, and the surface has good optical quality. A layer of gold-coated reflective film 2 is evaporated on the optical substrate 1 to achieve high reflectivity for lasers with different wavelengths in the wide spectral range from near-infrared to mid-far infrared, and then the graphene layer 3...

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Abstract

The invention discloses a saturable absorption mirror of wide band graphene, which sequentially comprises an optical substrate, a gold-plating reflection film and a graphene layer on the gold-plating reflection film from bottom to top. The saturated absorption mirror is simple in manufacture method and low in cost, overcomes the shortcoming that the SESAM is limited in band width and not compatible with different wave bands, successfully achieves mode-locked laser pulse output on mode-locked lasers on 1 micrometer band and 2 micrometer band, and is suitable for mode-locked and Q-switched lasers from near infrared band to medium and far infrared band. The saturable absorption mirror improves wavelength adaptation range and provides forceful support for production and application of ultra short pulse in different spectral regions.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a broadband graphene saturable absorber mirror used for mode-locked lasers or Q-switched lasers. Background technique [0002] Since the semiconductor saturable absorber mirror (SESAM) was first used in mode-locked lasers in the early 1990s, due to its stable performance, long service life, and no pollution, it has quickly replaced the dye that has been used for nearly 30 years and has become It is the main saturable absorbing device in mode-locked lasers and has greatly promoted the development of ultrafast laser technology. Currently available SESAMs are basically limited to the near-infrared band and have limited bandwidth, which severely limits the wavelength coverage and wavelength tunability of mode-locked laser pulses. Especially for the mid- and far-infrared bands, there is currently no SESAM available, making it difficult to generate stable ultrashort mode-locked pulses ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/11G02F1/35B82Y20/00
CPCH01S3/1118H01S3/0817H01S3/1616B82Y20/00H01S3/11H01S3/113H01S3/09415G02F1/35G02F1/3523G02F1/3551
Inventor 谢国强马杰高文兰钱列加吕鹏
Owner SHANGHAI JIAOTONG UNIV
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