Silicon PIN neutron dose detector and manufacturing method thereof

Abstract

The invention discloses a silicon PIN neutron dose detector and a manufacturing method thereof. The silicon PIN neutron dose detector comprises a high-resistance silicon wafer, and a P-type rectangular active region and an N-type rectangular active region which are respectively positioned on the front surface and the back surface of the high-resistance silicon wafer, wherein a vertical projection of the active region at the front surface of the silicon wafer on the back surface of the silicon wafer is bilaterally symmetric with the active region at the back surface of the silicon wafer. According to the silicon PIN neutron dose detector, a distance between the P-type active region and the N-type active region is effectively increased by designing the P-type active region and the N-type active region into an up-down non-vertically-symmetrical structure, so that a distance between a P region and an N region is greater than the thickness of the silicon wafer, namely, the effective thickness of an I region of the detector is increased, and the limitation of the thickness of the high-resistance silicon wafer on the thickness of the I region of a PIN transistor is broken through.

Description

technical field [0001] The invention relates to a silicon PIN neutron dose detector used in neutron dose detection, in particular to a silicon PIN neutron dose detector used in nuclear detection with higher performance requirements and a preparation method thereof. Background technique [0002] Neutron dose detection is the use of fast neutrons to irradiate silicon materials to cause defects inside the silicon lattice. The lattice defects will act as effective recombination centers to reduce the lifetime of minority carriers, thereby changing the voltage and current characteristics of silicon devices. Detect changes in the voltage and current characteristics of silicon devices to reflect the total dose of neutron radiation it receives over a period of time. [0003] Since the 1960s, silicon PIN detectors have been developed and applied to nuclear physics detection. The basic structure of the silicon PIN neutron dose detector is as follows: figure 1 As shown, a high-resista...

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Problems solved by technology

[0005] Despite the stated advantages of silicon PIN detectors, the aforementioned PIN detectors also have drawbacks

Published experimental research results show that the sensitivity of neutron detection depends on the distance between the P region and the N region, that is, the thickness of the I region, which requires a larger thickness of the silicon substrate, so that the above silicon neutron dose detection The sensitivity of the device is limited by the thickness of the silicon substrate, while increasing the production cost and process difficulty

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