BaTiO3-Ni0.5Zn0.5Fe2O4 ferroelectric-ferromagnetic composite ceramic thin film prepared by utilizing magnetron sputtering method and preparation method
A technology of magnetron sputtering and composite ceramics, which is applied in the field of preparation of synthetic ferroelectric and ferromagnetic composite materials, can solve the problems of difficult film sputtering deposition targets, large differences in formation conditions, and differences in grain size, etc., to achieve The effect of high film quality, good stability and simple process
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Embodiment 1
[0034] The sol-gel preparation steps for sputtering targets are as follows:
[0035] 1) Dissolve barium acetate, nickel nitrate, zinc acetate and iron nitrate in acetic acid, adjust the content of acetic acid, and make a Ba-Zn-Ni-Fe sol precursor with a concentration of 2mol / L, and dissolve butyl titanate in ethyl Glycol methyl ether, regulate ethylene glycol methyl ether content, be made into the Ti sol precursor that concentration is 1mol / L, the mol ratio of described barium acetate, butyl titanate, nickel nitrate, zinc acetate and ferric nitrate is 2: 2:1:1:4;
[0036] 2) In the state of stirring, add the Ba-Zn-Ni-Fe sol precursor dropwise into the Ti sol precursor, and add deionized water until the sol is clear and transparent to obtain the Ba-Zn-Ni-Fe-Ti sol precursor ;
[0037] 3) Let the Ba-Zn-Ni-Fe-Ti sol precursor stand still for 3 hours, then bake it in an oven at 120°C for 24 hours to obtain a dry sol, then pretreat the dry sol at 950°C for 1.5 hours, and grind t...
Embodiment 2
[0044] The sol-gel preparation steps of the sputtering target are the same as step in Example 1.
[0045] Thin film sputtering preparation, firstly evacuate the sputtering chamber to 1×10 -2 ~2×10 -2 Pa, adjust the oxygen-argon ratio (oxygen-argon ratio) to 1:1, and reduce the vacuum degree in the sputtering chamber to 6×10 -1 Pa, at room temperature, adjust the control power in the range of 100w to start sputtering, sputtering for 3h; then obtain the film layer obtained by sputtering on the glass substrate coated with ITO electrodes, and finally heat-treat the film at 600°C and air atmosphere 2h, the ferroelectric and ferromagnetic two-phase composite multiferroic ceramic thin film material was obtained. The dielectric constant spectrum obtained by the test is as follows image 3 As shown, the dielectric constant is about 295 when the frequency is 50kHz, and the initial permeability spectrum is as Figure 4 As shown, the magnetic permeability is about 5.2 when the frequ...
Embodiment 3
[0047] The sol-gel preparation steps of the sputtering target are the same as step in Example 1.
[0048] Thin film sputtering preparation, firstly evacuate the sputtering chamber to 1×10 -2 ~2×10 -2 Pa, adjust the oxygen-argon ratio (oxygen-argon ratio) to 1:2, and reduce the vacuum degree in the sputtering chamber to 6×10 -1 Pa, at room temperature, adjust the control power in the range of 120w to start sputtering, sputtering for 3h; then obtain the sputtered film on the glass substrate coated with ITO electrodes, and finally heat-treat the film at 610°C and air atmosphere 2h, the ferroelectric and ferromagnetic two-phase composite multiferroic ceramic thin film material was obtained. The dielectric constant spectrum obtained by the test is as follows image 3 As shown, the dielectric constant is about 118 when the frequency is 50kHz, and the initial permeability spectrum is as Figure 4 As shown, it is about 5.0 at a frequency of 50kHz. It can be seen that the obtain...
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